@inproceedings{f0b0a5290ee04267a3f58d18dc455b1b,
title = "A Dual-gate subharmonic injection-locked oscillator using 0.5 μm GaAs pHEMT technology",
abstract = "A dual-gate subharmonic injection-locked oscillator (SILO) designed for Q-band millimeter-wave applications has been implemented in 0.5 μm GaAs pHEMT process. Based on the dual-gate circuit topology, a wide-bandwidth and high-frequency negative resistance can be easily obtained for determining the free-running oscillation frequency by a proper resonator. The free-running frequency is designed around 49 GHz. The power consumption is 75 mW from a 5 V supply. The measured frequency tuning range is from 48.7 GHz to 49.7 GHz with 8 dBm output power. By injecting a 2nd-order subharmonic signal into the oscillator without any frequency tuning, the maximum locking range can reach to be 2.8 GHz. The measured output phase noise under locking status is close to 121 dBc/Hz at 1-MHz offset frequency.",
keywords = "Dual-gate, enhanced/depletion-mode HEMT, injection locked oscillator, subharmonic injection locking",
author = "Huang, {Fan Hsiu} and Tsai, {Meng Hsiu} and Chang, {Hong Yeh} and Hsin, {Yue Ming}",
year = "2010",
language = "???core.languages.en_GB???",
isbn = "9784902339222",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
pages = "940--943",
booktitle = "2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010",
note = "2010 Asia-Pacific Microwave Conference, APMC 2010 ; Conference date: 07-12-2010 Through 10-12-2010",
}