A comprehensive transport model for high performance HEMTs considering the parasitic resistance and capacitance effects

C. M. Hung, K. C. Li, E. R. Hsieh, C. T. Wang, C. I. Kou, Edward Y. Chang, Steve S. Chung

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

HEMT suffers from parasitic resistance (Rsd) and capacitance(Cgd) effects with the shrinking of channel length, leading to degraded performance in logic and RF applications. A new while simple method to extract parasitic RC has been proposed to construct accurate transport parameters in HEMTs. In comparison to the constant-Rsd method, this new voltage dependent method provides more convincing results, especially for very short channel devices. On the other hand, an accurate Cgd correction method has also been incorporated to adequately represent the mobility. Finally, a guideline to design high performance HEMTs has been proposed.

原文???core.languages.en_GB???
主出版物標題2014 Silicon Nanoelectronics Workshop, SNW 2014
發行者Institute of Electrical and Electronics Engineers Inc.
頁面152-153
頁數2
ISBN(電子)9781479956777
DOIs
出版狀態已出版 - 4 12月 2015
事件Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
持續時間: 8 6月 20149 6月 2014

出版系列

名字2014 Silicon Nanoelectronics Workshop, SNW 2014

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???event.eventtypes.event.conference???Silicon Nanoelectronics Workshop, SNW 2014
國家/地區United States
城市Honolulu
期間8/06/149/06/14

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