A comparative study of the passivation films on algaas/gaas heterojunction diodes and bipolar transistors

H. P. Hwang; J. L. Shieh; Y. S. Cheng; J. I. Chyi

doi:10.1109/16.902714

A comparative study of the passivation films on algaas/gaas heterojunction diodes and bipolar transistors

H. P. Hwang, J. L. Shieh, Y. S. Cheng, J. I. Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

A series of Si-based thin films, including amorphous Si, SiC, as well as the conventional SiO_x and SiN_x, was investigated in terms of the electrical characteristics of GaAs/Al_0.3Ga_0.7 As heterostructure diodes and heterojunction bipolar transistors (HBTs). All the films were found effective in reducing the leakage current and long term degradation. Less size-dependence of the current gain was found for the HBTs passivated by amorphous Si and SiC. In addition, the devices passivated by amorphous Si and SiC films exhibited better performance during high power operation. This is attributed to the high thermal conductivity of these two materials.

原文	???core.languages.en_GB???
頁（從 - 到）	185-189
頁數	5
期刊	IEEE Transactions on Electron Devices
卷	48
發行號	2
DOIs	https://doi.org/10.1109/16.902714
出版狀態	已出版 - 2001

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10.1109/16.902714

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abstract = "A series of Si-based thin films, including amorphous Si, SiC, as well as the conventional SiOx and SiNx, was investigated in terms of the electrical characteristics of GaAs/Al0.3Ga0.7 As heterostructure diodes and heterojunction bipolar transistors (HBTs). All the films were found effective in reducing the leakage current and long term degradation. Less size-dependence of the current gain was found for the HBTs passivated by amorphous Si and SiC. In addition, the devices passivated by amorphous Si and SiC films exhibited better performance during high power operation. This is attributed to the high thermal conductivity of these two materials.",

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note = "Funding Information: Manuscript received October 12, 1999. This work was supported in part by the National Science Council, R.O.C., under Contract NSC 85-2221-E008-018. The review of this paper was arranged by Editor M. F. Chang.",

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AU - Cheng, Y. S.

AU - Chyi, J. I.

N1 - Funding Information: Manuscript received October 12, 1999. This work was supported in part by the National Science Council, R.O.C., under Contract NSC 85-2221-E008-018. The review of this paper was arranged by Editor M. F. Chang.

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N2 - A series of Si-based thin films, including amorphous Si, SiC, as well as the conventional SiOx and SiNx, was investigated in terms of the electrical characteristics of GaAs/Al0.3Ga0.7 As heterostructure diodes and heterojunction bipolar transistors (HBTs). All the films were found effective in reducing the leakage current and long term degradation. Less size-dependence of the current gain was found for the HBTs passivated by amorphous Si and SiC. In addition, the devices passivated by amorphous Si and SiC films exhibited better performance during high power operation. This is attributed to the high thermal conductivity of these two materials.

AB - A series of Si-based thin films, including amorphous Si, SiC, as well as the conventional SiOx and SiNx, was investigated in terms of the electrical characteristics of GaAs/Al0.3Ga0.7 As heterostructure diodes and heterojunction bipolar transistors (HBTs). All the films were found effective in reducing the leakage current and long term degradation. Less size-dependence of the current gain was found for the HBTs passivated by amorphous Si and SiC. In addition, the devices passivated by amorphous Si and SiC films exhibited better performance during high power operation. This is attributed to the high thermal conductivity of these two materials.

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A comparative study of the passivation films on algaas/gaas heterojunction diodes and bipolar transistors

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