摘要
This letter presents a Ka-band GaAs broadband high efficiency power amplifier (PA). The power amplifier achieves the best trade-off among gain, output power, power added efficiency (PAE), and fractional bandwidth through nonlinear simulations to select proper device size and bias conditions. The high-efficiency and broadband performances are achieved by using continuous Class-B/J mode for fundamental and second harmonics output matching network. The fabricated PA achieves a power gain of 18.8 dB, a 3-dB bandwidth of 25–30.2 GHz, a saturation power 25.5 dBm, a peak PAE of 30.0%. The chip size is as compact as 1.08 mm2 including all pads.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 3101-3106 |
頁數 | 6 |
期刊 | Microwave and Optical Technology Letters |
卷 | 65 |
發行號 | 12 |
DOIs | |
出版狀態 | 已出版 - 12月 2023 |