摘要
In this paper, we report a collector-up npn heterojunction bipolar transistor (C-up HBT) which employs a p-type doping buried layer inserted between an extrinsic emitter and a subemitter for current confinement. Fabrication of C-up AlGaAs/GaAs HBTs with a selectively buried layer by metalorganic chemical vapour deposition (MOCVD) regrowth is described. The fabricated C-up AlGaAs/GaAs HBT demonstrates good common-emitter I-V characteristics and a current gain of 18. A systematic analysis is performed to verify the functionality of the p-type doping buried layer using a two-dimensional device simulator. It is found that the p-type doping buried layer should be biased properly to achieve the high efficiency of current confinement. And the HBT with a large ΔEV at the base-emitter heterojunction is preferred for the proposed C-up HBTs to reduce hole back-injection.
原文 | ???core.languages.en_GB??? |
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文章編號 | 039 |
頁(從 - 到) | 1728-1732 |
頁數 | 5 |
期刊 | Semiconductor Science and Technology |
卷 | 21 |
發行號 | 12 |
DOIs | |
出版狀態 | 已出版 - 1 12月 2006 |