A carrier escape study from InAs self-assembled quantum dots by photocurrent measurement

W. H. Chang, T. M. Hsu, C. C. Huang, S. L. Hsu, C. Y. Lai, N. T. Yeh, J. I. Chyi

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

We report investigations of the carrier escape from InAs self-assembled quantum dots. Based on measurements of the temperature-dependent photocurrent, the escape of photoexcited carriers is found to be dominated by the hole escape process. The main path for this hole escape was further clarified, which is a thermally assisted hole tunneling, from the dot level to the GaAs barrier via the wetting layer as an intermediate state. The size selective tunneling effect and the carrier redistribution effect are discussed and compared with temperature-dependent photoluminescence measurements.

原文???core.languages.en_GB???
頁(從 - 到)85-88
頁數4
期刊Physica Status Solidi (B) Basic Research
224
發行號1
DOIs
出版狀態已出版 - 3月 2001

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