A broadband high efficiency high output power frequency doubler

Hong Yeh Chang; Guan Yu Chen; Yue Ming Hsin

doi:10.1109/LMWC.2010.2042560

A broadband high efficiency high output power frequency doubler

Hong Yeh Chang, Guan Yu Chen, Yue Ming Hsin

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

22 引文斯高帕斯（Scopus）

摘要

An 8 to 30 GHz broadband high efficiency, high output power frequency doubler using 0.5 μm AlGaAs/InGaAs enhancement-mode pseudomorphic high electronic mobility transistor process is presented in this paper. A common-gate/common-source field effect transistor pair is employed in the balanced doubler. With an input power of 8 dBm, this work features a conversion gain of better than -4 dB with a fundamental rejection of better than 13 dB over the operation bandwidth. The output 1 dB compression point (P_{1 dB}) and the saturation output power (P_sat) are higher than 7.3 and 10 dBm, respectively. This work presents the highest figure-of-merit (FOM) of 25.14 as compared to other previously reported broadband doublers.

原文	???core.languages.en_GB???
文章編號	5427078
頁（從 - 到）	226-228
頁數	3
期刊	IEEE Microwave and Wireless Components Letters
卷	20
發行號	4
DOIs	https://doi.org/10.1109/LMWC.2010.2042560
出版狀態	已出版 - 4月 2010

存取文件

10.1109/LMWC.2010.2042560

引用此

@article{120ce4678729416d9bda4572d3e90410,

title = "A broadband high efficiency high output power frequency doubler",

abstract = "An 8 to 30 GHz broadband high efficiency, high output power frequency doubler using 0.5 μm AlGaAs/InGaAs enhancement-mode pseudomorphic high electronic mobility transistor process is presented in this paper. A common-gate/common-source field effect transistor pair is employed in the balanced doubler. With an input power of 8 dBm, this work features a conversion gain of better than -4 dB with a fundamental rejection of better than 13 dB over the operation bandwidth. The output 1 dB compression point (P1 dB) and the saturation output power (Psat) are higher than 7.3 and 10 dBm, respectively. This work presents the highest figure-of-merit (FOM) of 25.14 as compared to other previously reported broadband doublers.",

keywords = "Broadband, Distributed, Enhancement-mode (E-Mode), Frequency doubler, PHEMT",

author = "Chang, {Hong Yeh} and Chen, {Guan Yu} and Hsin, {Yue Ming}",

note = "Funding Information: Manuscript received November 30, 2009; revised December 21, 2009. First published March 08, 2010; current version published April 07, 2010. This work was supported in part by the National Science Council of Taiwan, under Grant NSC 96-2221-E-008-117-MY3, by WIN Semiconductors Corporation, and by the Chip Implementation Center (CIC), Taiwan.",

year = "2010",

month = apr,

doi = "10.1109/LMWC.2010.2042560",

language = "???core.languages.en_GB???",

volume = "20",

pages = "226--228",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

number = "4",

}

TY - JOUR

T1 - A broadband high efficiency high output power frequency doubler

AU - Chang, Hong Yeh

AU - Chen, Guan Yu

AU - Hsin, Yue Ming

N1 - Funding Information: Manuscript received November 30, 2009; revised December 21, 2009. First published March 08, 2010; current version published April 07, 2010. This work was supported in part by the National Science Council of Taiwan, under Grant NSC 96-2221-E-008-117-MY3, by WIN Semiconductors Corporation, and by the Chip Implementation Center (CIC), Taiwan.

PY - 2010/4

Y1 - 2010/4

N2 - An 8 to 30 GHz broadband high efficiency, high output power frequency doubler using 0.5 μm AlGaAs/InGaAs enhancement-mode pseudomorphic high electronic mobility transistor process is presented in this paper. A common-gate/common-source field effect transistor pair is employed in the balanced doubler. With an input power of 8 dBm, this work features a conversion gain of better than -4 dB with a fundamental rejection of better than 13 dB over the operation bandwidth. The output 1 dB compression point (P1 dB) and the saturation output power (Psat) are higher than 7.3 and 10 dBm, respectively. This work presents the highest figure-of-merit (FOM) of 25.14 as compared to other previously reported broadband doublers.

AB - An 8 to 30 GHz broadband high efficiency, high output power frequency doubler using 0.5 μm AlGaAs/InGaAs enhancement-mode pseudomorphic high electronic mobility transistor process is presented in this paper. A common-gate/common-source field effect transistor pair is employed in the balanced doubler. With an input power of 8 dBm, this work features a conversion gain of better than -4 dB with a fundamental rejection of better than 13 dB over the operation bandwidth. The output 1 dB compression point (P1 dB) and the saturation output power (Psat) are higher than 7.3 and 10 dBm, respectively. This work presents the highest figure-of-merit (FOM) of 25.14 as compared to other previously reported broadband doublers.

KW - Broadband

KW - Distributed

KW - Enhancement-mode (E-Mode)

KW - Frequency doubler

KW - PHEMT

UR - http://www.scopus.com/inward/record.url?scp=77950861271&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2010.2042560

DO - 10.1109/LMWC.2010.2042560

M3 - 期刊論文

AN - SCOPUS:77950861271

SN - 1531-1309

VL - 20

SP - 226

EP - 228

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 4

M1 - 5427078

ER -

A broadband high efficiency high output power frequency doubler

摘要

存取文件

指紋

引用此