A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time

Yue Ming Hsin, Tsung Yu Ke, Geng Yen Lee, Jen Inn Chyi, Hsien Chin Chiu

研究成果: 雜誌貢獻期刊論文同行評審

18 引文 斯高帕斯(Scopus)

摘要

Lateral AlGaN/GaN Schottky barrier diodes on silicon (111) substrate have been fabricated and characterized. The Hall measurement shows the mobility of 1430 cm 2/V-s with a sheet carrier density of 9.8 × 10 12 cm -2 for the AlGaN/GaN structure. The specific on-state resistance (R on) is 1.27 mΩ-cm 2, while the forward turn-on voltage is 1.43 V at the current density of 100 A/cm 2 for device with Schottky-to-ohmic distance of 10 μm. The measured reverse breakdown voltage (V B) at room temperature is up to 600 V without edge termination. The figure-of-merit, (V B) 2/R on, is 302.7 MWcm -2, and fast reverse recovery time is observed for device switched from a forward current density of 720 A/cm 2 to a reverse bias of 30 V with di /dt of 60 A/μs.

原文???core.languages.en_GB???
頁(從 - 到)949-952
頁數4
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
9
發行號3-4
DOIs
出版狀態已出版 - 3月 2012

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