摘要
Lateral AlGaN/GaN Schottky barrier diodes on silicon (111) substrate have been fabricated and characterized. The Hall measurement shows the mobility of 1430 cm 2/V-s with a sheet carrier density of 9.8 × 10 12 cm -2 for the AlGaN/GaN structure. The specific on-state resistance (R on) is 1.27 mΩ-cm 2, while the forward turn-on voltage is 1.43 V at the current density of 100 A/cm 2 for device with Schottky-to-ohmic distance of 10 μm. The measured reverse breakdown voltage (V B) at room temperature is up to 600 V without edge termination. The figure-of-merit, (V B) 2/R on, is 302.7 MWcm -2, and fast reverse recovery time is observed for device switched from a forward current density of 720 A/cm 2 to a reverse bias of 30 V with di /dt of 60 A/μs.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 949-952 |
頁數 | 4 |
期刊 | Physica Status Solidi (C) Current Topics in Solid State Physics |
卷 | 9 |
發行號 | 3-4 |
DOIs | |
出版狀態 | 已出版 - 3月 2012 |