@inproceedings{bccbb8adbbf142b19a1ff014fcda65ce,
title = "A 60-110 GHz low conversion loss tripler in 0.15-μm MHEMT process",
abstract = "A 60-110 GHz low conversion loss tripler in a 0.15-μm InGaAs metamorphic high electron-mobility transistor (MHEMT) technology is presented in this paper. The tripler employs a configuration of an anti-parallel diode pair to produce the third harmonic signal. Between 60 and 110 GHz, this tripler features a conversion loss of less than 20 dB with an input power of 15 dBm. The minimum conversion loss is 13 dB at 81 GHz with an output power of 3 dBm. The output 1-dB compression point (P1dB) is higher than 3 dBm among the operating bandwidth. The output power is higher than 4 dBm while the driving power is 20 dBm. The overall chip size is 1x1 mm2. To the best of the author's knowledge, this is the highest output power MMIC-based diode tripler to cover the entire E- and W-band without dc power consumption.",
keywords = "Diode tripler, InGaAS, MHEMT, Millimeterwave, W-band",
author = "Chen, {Guan Yu} and Wu, {Yi Shuo} and Chang, {Hong Yeh} and Hsin, {Yue Ming} and Chiong, {Chau Ching}",
year = "2009",
doi = "10.1109/APMC.2009.5384527",
language = "???core.languages.en_GB???",
isbn = "9781424428021",
series = "APMC 2009 - Asia Pacific Microwave Conference 2009",
pages = "377--380",
booktitle = "APMC 2009 - Asia Pacific Microwave Conference 2009",
note = "Asia Pacific Microwave Conference 2009, APMC 2009 ; Conference date: 07-12-2009 Through 10-12-2009",
}