@article{bf891077da314fd4bc8aa032a3169e8e,
title = "A 38% tuning bandwidth low phase noise differential voltage controlled oscillator using a 0.5 μ e/d-phemt process",
abstract = "This paper presents a 38% tuning bandwidth low phase noise differential voltage controlled oscillator (VCO) using a 0.5 mu;enhancement/depletion- pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed VCO is based on a differential topology with two common-gate transistors. To achieve a wide tuning range with low phase noise, varactor in the VCO core employs the E-mode PHEMT device. The frequency of the VCO is from 18.8 to 27.5 GHz with a tuning bandwidth of 38% and an output power of higher than 5 dBm. The VCO demonstrates a phase noise of -109 dBc/Hz at 1 MHz offset frequency. This circuit can be compared with the VCOs fabricated using the advanced InP HBT technologies.",
keywords = "Enhancement/depletion-pseudomorphic high- electron mobility transistor (E/D-PHEMT), Low phase noise, Voltage controlled oscillator (VCO)",
author = "Chang, {Hong Yeh} and Wu, {Yi Shuo} and Wang, {Yu Chi}",
note = "Funding Information: Manuscript received February 02, 2009; revised February 25, 2009. First published June 23, 2009; current version published July 09, 2009. This work was supported in part by the National Science Council of Taiwan under Grant NSC 96-2221-E-008-117-MY3, Grant NSC 96-2628-E-008-073-MY3, and by WIN Semiconductors Corporation, and the Chip Implementation Center (CIC), Taiwan.",
year = "2009",
month = jul,
doi = "10.1109/LMWC.2009.2022136",
language = "???core.languages.en_GB???",
volume = "19",
pages = "467--469",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
number = "7",
}