@inproceedings{8d67734e23b54d72a1d07c36d4e88472,
title = "A 3.6 4.5 GHz Doherty RF Power Amplifier Using 0.25-?m GaN/SiC HEMT and GaAs IPD technology",
abstract = "This paper introduces a Quasi-MMIC Doherty power amplifier operating in the 3.6-4.5 GHz frequency range. The power amplifier was manufactured using WIN{\texttrademark} Semiconductors' 0.25-?m Gallium Nitride/Silicon Carbide (GaN/SiC) technology and GaAs IPD technology. The GaN and GaAs IPD chips for the proposed power amplifier were assembled using Chip-on-Board wire-bond assembly technology. The power amplifier exhibited a gain of 18.5 dB, a 3-dB bandwidth from 3.6 GHz to 4.5 GHz, a saturation power of 38.4 dBm, and a peak power-added efficiency of 32.8%. In the context of a 5G NR FR1 256-QAM modulated signal with a 100-MHz bandwidth, the power amplifier demonstrated an average output power of 29.9 dBm under an error vector magnitude 3.5% limitation.",
keywords = "Doherty, GaAs, GaN/SiC, IPD, Power Amplifier (PA)",
author = "Lin, {Hsin Chieh} and Chang, {Da Chiang} and Fan, {Te Hua} and Chiou, {Hwann Kaeo}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 12th IEEE CPMT Symposium Japan, ICSJ 2023 ; Conference date: 15-11-2023 Through 17-11-2023",
year = "2023",
doi = "10.1109/ICSJ59341.2023.10339579",
language = "???core.languages.en_GB???",
series = "2023 IEEE CPMT Symposium Japan, ICSJ 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "156--159",
booktitle = "2023 IEEE CPMT Symposium Japan, ICSJ 2023",
}