A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology

Lung Yi Chen; Jia Shiang Fu

doi:10.1109/RFIT52905.2021.9565317

A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology

Lung Yi Chen, Jia Shiang Fu

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

摘要

A power amplifier (PA) is designed at 3.5 GHz for 5G small-cell base station applications. The proposed PA is implemented in WIN 0.25-μ m GaN HEMT technology. The chip area is 1 × 1 mm 2. Measurement results show that, from 3.3 to 3.8 GHz, the input return loss and gain of the PA are greater than 10.2 dB and 12.6 dB, respectively. At 3.5 GHz, the measured OP1dB and the corresponding PAE are 33 dBm (2 W) and 44%, respectively.

原文	???core.languages.en_GB???
主出版物標題	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665433914
DOIs	https://doi.org/10.1109/RFIT52905.2021.9565317
出版狀態	已出版 - 25 8月 2021
事件	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan 持續時間: 25 8月 2021 → 27 8月 2021

出版系列

名字	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
國家/地區	Taiwan
城市	Hualien
期間	25/08/21 → 27/08/21

存取文件

10.1109/RFIT52905.2021.9565317

應用於微型無線感測器之天線整合毫米波辨識標籤晶片
Fu, J.
1/08/20 → 31/10/21
研究計畫: Research
應用於主動式相位陣列雲雷達之毫米波前端電路
Fu, J.
1/08/19 → 31/10/20
研究計畫: Research

引用此

Chen, L. Y., & Fu, J. S. (2021). A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology. 於 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT52905.2021.9565317

@inproceedings{21a9e4d1872747539dffd248089d9e9c,

title = "A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology",

abstract = "A power amplifier (PA) is designed at 3.5 GHz for 5G small-cell base station applications. The proposed PA is implemented in WIN 0.25-μ m GaN HEMT technology. The chip area is 1 × 1 mm 2. Measurement results show that, from 3.3 to 3.8 GHz, the input return loss and gain of the PA are greater than 10.2 dB and 12.6 dB, respectively. At 3.5 GHz, the measured OP1dB and the corresponding PAE are 33 dBm (2 W) and 44%, respectively.",

keywords = "5G, GaN HEMT, Power amplifier, sub-6 GHz",

author = "Chen, {Lung Yi} and Fu, {Jia Shiang}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; null ; Conference date: 25-08-2021 Through 27-08-2021",

year = "2021",

month = aug,

day = "25",

doi = "10.1109/RFIT52905.2021.9565317",

language = "???core.languages.en_GB???",

series = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",

}

Chen, LY & Fu, JS 2021, A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology. 於 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Institute of Electrical and Electronics Engineers Inc., 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Hualien, Taiwan, 25/08/21. https://doi.org/10.1109/RFIT52905.2021.9565317

A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology. / Chen, Lung Yi; Fu, Jia Shiang.

2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology

AU - Chen, Lung Yi

AU - Fu, Jia Shiang

PY - 2021/8/25

Y1 - 2021/8/25

N2 - A power amplifier (PA) is designed at 3.5 GHz for 5G small-cell base station applications. The proposed PA is implemented in WIN 0.25-μ m GaN HEMT technology. The chip area is 1 × 1 mm 2. Measurement results show that, from 3.3 to 3.8 GHz, the input return loss and gain of the PA are greater than 10.2 dB and 12.6 dB, respectively. At 3.5 GHz, the measured OP1dB and the corresponding PAE are 33 dBm (2 W) and 44%, respectively.

AB - A power amplifier (PA) is designed at 3.5 GHz for 5G small-cell base station applications. The proposed PA is implemented in WIN 0.25-μ m GaN HEMT technology. The chip area is 1 × 1 mm 2. Measurement results show that, from 3.3 to 3.8 GHz, the input return loss and gain of the PA are greater than 10.2 dB and 12.6 dB, respectively. At 3.5 GHz, the measured OP1dB and the corresponding PAE are 33 dBm (2 W) and 44%, respectively.

KW - 5G

KW - GaN HEMT

KW - Power amplifier

KW - sub-6 GHz

UR - http://www.scopus.com/inward/record.url?scp=85118193618&partnerID=8YFLogxK

U2 - 10.1109/RFIT52905.2021.9565317

DO - 10.1109/RFIT52905.2021.9565317

M3 - 會議論文篇章

AN - SCOPUS:85118193618

T3 - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

BT - 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 25 August 2021 through 27 August 2021

ER -

A 3.5-GHz 2-W Power Amplifier in GaN HEMT Technology

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應用於微型無線感測器之天線整合毫米波辨識標籤晶片

應用於主動式相位陣列雲雷達之毫米波前端電路

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