A 26 - 65 GHz GaAs pHEMT cascaded single stage distributed amplifier with high gain/area efficiency

Kai Yun Lin, I. Shan Chen, Hwann Kaeo Chiou

研究成果: 書貢獻/報告類型會議論文篇章同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper demonstrates the design of a miniature three-stage cascaded single stage distributed amplifier (CSSDA), which functions over the frequency range from 26 GHz to 65 GHz with a 16.5 dB small signal gain and a gain bandwidth product (GBW) of 260 GHz. This three-stage CSSDA was designed and fabricated using a 0.15 μm GaAs-based pseudomorphic high electron-mobility transistor (pHEMT) MMIC foundry process provided by WIN Semiconductor, and the chip size is compact as 1.65 × 0.83 mm2 which yields the best gain/area efficiency among the previous works.

原文???core.languages.en_GB???
主出版物標題2006 Asia-Pacific Microwave Conference Proceedings, APMC
頁面722-725
頁數4
DOIs
出版狀態已出版 - 2006
事件2006 Asia-Pacific Microwave Conference, APMC - Yokohama, Japan
持續時間: 12 12月 200615 12月 2006

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC
2

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???event.eventtypes.event.conference???2006 Asia-Pacific Microwave Conference, APMC
國家/地區Japan
城市Yokohama
期間12/12/0615/12/06

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