A 12-to-17 GHz power amplifier using T-model matching network in 0.25-μm GaN pHEMT technology

Hsuan Yin Huang, Jyun Jia Huang, Jhih Bin Cai, Hong Yeh Chang

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

摘要

A Ku-band power amplifier (PA) with T-model matching network is implemented using 0.25 μm GaN pHEMT process in this paper. To achieve broadband with high output power, the output matching of the PA is realized using the T-model matching network. Between 12 and 17 GHz, the small-signal gain and saturation output power (Psat) are higher than 12 dB and 29 dBm, resepectively. The measured maximum small-signal gain is 12 dB as the frequency is 16 GHz. When the supply voltage is 25 V, the proposed PA demonstrated a Psat of 27 dBm over the frequency, and a maximum power-added efficiency (PAE) of higher than 8% at 15 GHz.

原文???core.languages.en_GB???
主出版物標題Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁面980-982
頁數3
ISBN(電子)9781728135175
DOIs
出版狀態已出版 - 12月 2019
事件2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 - Singapore, Singapore
持續時間: 10 12月 201913 12月 2019

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC
2019-December

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???event.eventtypes.event.conference???2019 IEEE Asia-Pacific Microwave Conference, APMC 2019
國家/地區Singapore
城市Singapore
期間10/12/1913/12/19

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