This paper presents a 0.6-6.2 GHz wideband CMOS low noise amplifier (LNA) for multi-band application. The LNA design is based on a common source (CS) cascade amplifier with resistive feedback, gate inductive peaking, and source degeneration inductive topologies to realize the matching networks for broadband operation. The authors also derived the formula of the input and output impedances those help to select proper values of biasing and matching elements. The LNA achieves a peak gain S21 of 11.61 dB, a noise figure (NF) of 5.28 to 5.82 dB at frequency from 0.6 to 6.2 GHz, and an input third-intercept point (IIP3) of -2.55 dBm at 2.5 GHz under DC power of 8.45 mW from a 1.5 V supply voltage. The figure-of-merit (FOM) for wideband LNA is up to 0.51 at 2.5 GHz. The LNA is fabricated in tsmc™ 0.18-μm RF CMOS technology with a chip area of 0.8 mm2.