36 GHz bandwidth optoelectronic integrated circuit with flip-chip-assembled InP HBT/evanescently coupled photodiode

W. K. Huang, S. C. Huang, Y. M. Hsin, J. W. Shi, Y. C. Kao, J. M. Kuo

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

An optoelectronic integrated circuit (OEIC) with flip-chip technology for 1.55-m wavelength application is demonstrated. The presented flip-chip OEIC comprises an InP chip and the carrier substrate. The InP chip consists of an evanescently coupled photodiode (ECPD), an InP/InGaAs heterojunction bipolar transistor (HBT) and bonding pads. The semi-insulating GaAs carrier consists of a coplanar waveguide, bias resistances, interconnects and pads (DC, RF and bonding pads). The flip-chip technology is used to reduce InP chip size and thus save cost. The fabricated ECPD exhibits a responsivity of 0.3 A/W and an f -3 dB of 30 GHz. The OEIC demonstrates an f-3 dB of 36 GHz with a transimpedance gain of 32 dB Ω. This is the first ECPD/HBT with flip-chip technology ever reported for OEIC.

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頁(從 - 到)6-9
頁數4
期刊IET Optoelectronics
2
發行號1
DOIs
出版狀態已出版 - 2008

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