@inproceedings{950a1c300d254887a133feb69eb109ff,
title = "3-bits-per-cell 2T32CFEnvTCAM by Angstrom-laminated Ferroelectric Layers with 1011Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching",
abstract = "A 3D monolithically embedded ferroelectric nvTCAM has been firstly proposed. To prove the concept, the 2T32CFE nvTCAM array has been fabricated, which is fully integrated in the standard CMOS technology. 32 ferro-layers can be deposited between metal layers in the back-end-of-line, which effectively reduces 16 × layout overhead. With performance-enhanced angstrom-laminated ferroelectrics, the TCAM shows ultra-wide memory window, 4.94V, and 5 × 104 of on/off ratios, with 8-levels-storage in between. Moreover, searching-power only consumes 9.6 μ W/b in 4.5ns. The endurance achieves 1011 cycles for each storage level, and decade-lifetime can be well-predicted at 87.6°C. This work will prove a competitive solution for future in-memory-searching technologies, aiming for super-chip applications in up-coming 1-trillion-transistors era.",
author = "Hsieh, {E. R.} and Tang, {Y. T.} and Liu, {C. R.} and Wang, {S. M.} and Hsueh, {Y. L.} and Lin, {R. Q.} and Huang, {Y. X.} and Chen, {Y. T.}",
note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 ; Conference date: 11-06-2023 Through 16-06-2023",
year = "2023",
doi = "10.23919/VLSITechnologyandCir57934.2023.10185226",
language = "???core.languages.en_GB???",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023",
}