2.6 A, 0.69 MW cm-2 single-chip bulk GaN p-i-n rectifier

Y. Irokawa; B. Luo; B. S. Kang; Jihyun Kim; J. R. LaRoche; F. Ren; K. H. Baik; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi; S. S. Park; Y. J. Park

doi:10.1016/S0038-1101(03)00323-X

2.6 A, 0.69 MW cm^-2 single-chip bulk GaN p-i-n rectifier

Y. Irokawa
, B. Luo
, B. S. Kang
, Jihyun Kim
, J. R. LaRoche
, F. Ren
, K. H. Baik
, S. J. Pearton
, C. C. Pan
, G. T. Chen
, J. I. Chyi
, S. S. Park
, Y. J. Park

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The performance of a 9 device array of 500 × 500 μm² GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was ∼ 5.5 V at 25 °C, with an on-state resistance of ∼ 5 × 10^-3 Ωcm². The total forward current was 1 A at ∼ 8.8 V and 2.6 A at 18 V. The power figure-of-merit for the array, V_B ²/R_ON, was 0.69 MWcm^-2, with a reverse recovery time of ≤300 ns. The individual p-i-n rectifiers were interconnected using electroplated Au and clamped in a Cu pressure pack for thermal management.

原文	???core.languages.en_GB???
頁（從 - 到）	359-361
頁數	3
期刊	Solid-State Electronics
卷	48
發行號	2
DOIs	https://doi.org/10.1016/S0038-1101(03)00323-X
出版狀態	已出版 - 2月 2004

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10.1016/S0038-1101(03)00323-X

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@article{221774af4a4647798cba6bbb6165c98d,

title = "2.6 A, 0.69 MW cm-2 single-chip bulk GaN p-i-n rectifier",

abstract = "The performance of a 9 device array of 500 × 500 μm2 GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was ∼ 5.5 V at 25 °C, with an on-state resistance of ∼ 5 × 10-3 Ωcm2. The total forward current was 1 A at ∼ 8.8 V and 2.6 A at 18 V. The power figure-of-merit for the array, VB 2/RON, was 0.69 MWcm-2, with a reverse recovery time of ≤300 ns. The individual p-i-n rectifiers were interconnected using electroplated Au and clamped in a Cu pressure pack for thermal management.",

author = "Y. Irokawa and B. Luo and Kang, \{B. S.\} and Jihyun Kim and LaRoche, \{J. R.\} and F. Ren and Baik, \{K. H.\} and Pearton, \{S. J.\} and Pan, \{C. C.\} and Chen, \{G. T.\} and Chyi, \{J. I.\} and Park, \{S. S.\} and Park, \{Y. J.\}",

note = "Funding Information: The work at UF is partially supported by EPRI and NSF(CTS-0301178) monitored by Dr. M. Burka. The work at NCU is partially supported by the Ministry of Education of ROC under the Program for Promoting Academic Excellence of Universities (890E-FA06-1-4) and the National Science Council of ROC (NSC89-2215-E-008-031).",

year = "2004",

month = feb,

doi = "10.1016/S0038-1101(03)00323-X",

language = "???core.languages.en\_GB???",

volume = "48",

pages = "359--361",

journal = "Solid-State Electronics",

issn = "0038-1101",

number = "2",

}

TY - JOUR

T1 - 2.6 A, 0.69 MW cm-2 single-chip bulk GaN p-i-n rectifier

AU - Irokawa, Y.

AU - Luo, B.

AU - Kang, B. S.

AU - Kim, Jihyun

AU - LaRoche, J. R.

AU - Ren, F.

AU - Baik, K. H.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Park, S. S.

AU - Park, Y. J.

N1 - Funding Information: The work at UF is partially supported by EPRI and NSF(CTS-0301178) monitored by Dr. M. Burka. The work at NCU is partially supported by the Ministry of Education of ROC under the Program for Promoting Academic Excellence of Universities (890E-FA06-1-4) and the National Science Council of ROC (NSC89-2215-E-008-031).

PY - 2004/2

Y1 - 2004/2

N2 - The performance of a 9 device array of 500 × 500 μm2 GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was ∼ 5.5 V at 25 °C, with an on-state resistance of ∼ 5 × 10-3 Ωcm2. The total forward current was 1 A at ∼ 8.8 V and 2.6 A at 18 V. The power figure-of-merit for the array, VB 2/RON, was 0.69 MWcm-2, with a reverse recovery time of ≤300 ns. The individual p-i-n rectifiers were interconnected using electroplated Au and clamped in a Cu pressure pack for thermal management.

AB - The performance of a 9 device array of 500 × 500 μm2 GaN p-i-n rectifiers fabricated on epitaxial layers grown on a free-standing GaN template is reported. The forward turn-on voltage was ∼ 5.5 V at 25 °C, with an on-state resistance of ∼ 5 × 10-3 Ωcm2. The total forward current was 1 A at ∼ 8.8 V and 2.6 A at 18 V. The power figure-of-merit for the array, VB 2/RON, was 0.69 MWcm-2, with a reverse recovery time of ≤300 ns. The individual p-i-n rectifiers were interconnected using electroplated Au and clamped in a Cu pressure pack for thermal management.

UR - https://www.scopus.com/pages/publications/0242366635

U2 - 10.1016/S0038-1101(03)00323-X

DO - 10.1016/S0038-1101(03)00323-X

M3 - 期刊論文

AN - SCOPUS:0242366635

SN - 0038-1101

VL - 48

SP - 359

EP - 361

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 2

ER -

2.6 A, 0.69 MW cm-2 single-chip bulk GaN p-i-n rectifier

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2.6 A, 0.69 MW cm^-2 single-chip bulk GaN p-i-n rectifier