2.4-GHz complementary metal oxide semiconductor power amplifier using high-quality factor wafer-level bondwire spiral inductor

Kuei Cheng Lin, Hwann Kaeo Chiou, Po Chang Wu, Wei Hsien Chen, Chun Lin Ko, Ying Zong Juang

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

A complementary metal oxide semiconductor (CMOS) power amplifier (PA) using a wafer-level bondwire spiral inductor with high-quality factor (Q) is presented. The inductor is made by three top metal traces connected with bondwire loops above the CMOS chip. The proposed inductor with 2.75-nH inductance achieves a Q of 18, which is three times as much as that of a conventional CMOS standard spiral inductor at 2.4 GHz. The Q of the inductor is over 15 from 2 to 14 GHz, which can cover the frequency band of wireless sensor network and worldwide interoperability for microwave access applications. The output power and power-added efficiency of the PA with the inductor are improved by 1.5 dBm and 7% as compared with those of the fully integrated CMOS PA, respectively.

原文???core.languages.en_GB???
文章編號6384719
頁(從 - 到)1286-1292
頁數7
期刊IEEE Transactions on Components, Packaging and Manufacturing Technology
3
發行號8
DOIs
出版狀態已出版 - 2013

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