2.4-GHz complementary metal oxide semiconductor power amplifier using high-quality factor wafer-level bondwire spiral inductor

Kuei Cheng Lin; Hwann Kaeo Chiou; Po Chang Wu; Wei Hsien Chen; Chun Lin Ko; Ying Zong Juang

doi:10.1109/TCPMT.2012.2227260

2.4-GHz complementary metal oxide semiconductor power amplifier using high-quality factor wafer-level bondwire spiral inductor

Kuei Cheng Lin, Hwann Kaeo Chiou, Po Chang Wu, Wei Hsien Chen, Chun Lin Ko, Ying Zong Juang

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

14 引文斯高帕斯（Scopus）

摘要

A complementary metal oxide semiconductor (CMOS) power amplifier (PA) using a wafer-level bondwire spiral inductor with high-quality factor (Q) is presented. The inductor is made by three top metal traces connected with bondwire loops above the CMOS chip. The proposed inductor with 2.75-nH inductance achieves a Q of 18, which is three times as much as that of a conventional CMOS standard spiral inductor at 2.4 GHz. The Q of the inductor is over 15 from 2 to 14 GHz, which can cover the frequency band of wireless sensor network and worldwide interoperability for microwave access applications. The output power and power-added efficiency of the PA with the inductor are improved by 1.5 dBm and 7% as compared with those of the fully integrated CMOS PA, respectively.

原文	???core.languages.en_GB???
文章編號	6384719
頁（從 - 到）	1286-1292
頁數	7
期刊	IEEE Transactions on Components, Packaging and Manufacturing Technology
卷	3
發行號	8
DOIs	https://doi.org/10.1109/TCPMT.2012.2227260
出版狀態	已出版 - 2013

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10.1109/TCPMT.2012.2227260

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@article{ee780242215a462aaf42d73fec841304,

title = "2.4-GHz complementary metal oxide semiconductor power amplifier using high-quality factor wafer-level bondwire spiral inductor",

abstract = "A complementary metal oxide semiconductor (CMOS) power amplifier (PA) using a wafer-level bondwire spiral inductor with high-quality factor (Q) is presented. The inductor is made by three top metal traces connected with bondwire loops above the CMOS chip. The proposed inductor with 2.75-nH inductance achieves a Q of 18, which is three times as much as that of a conventional CMOS standard spiral inductor at 2.4 GHz. The Q of the inductor is over 15 from 2 to 14 GHz, which can cover the frequency band of wireless sensor network and worldwide interoperability for microwave access applications. The output power and power-added efficiency of the PA with the inductor are improved by 1.5 dBm and 7% as compared with those of the fully integrated CMOS PA, respectively.",

keywords = "Bondwire loop, complementary metal oxide semiconductor (CMOS), power added efficiency (PAE), power amplifier (PA), quality factor (Q), spiral inductor",

author = "Lin, {Kuei Cheng} and Chiou, {Hwann Kaeo} and Wu, {Po Chang} and Chen, {Wei Hsien} and Ko, {Chun Lin} and Juang, {Ying Zong}",

year = "2013",

doi = "10.1109/TCPMT.2012.2227260",

language = "???core.languages.en_GB???",

volume = "3",

pages = "1286--1292",

journal = "IEEE Transactions on Components, Packaging and Manufacturing Technology",

issn = "2156-3950",

number = "8",

}

TY - JOUR

T1 - 2.4-GHz complementary metal oxide semiconductor power amplifier using high-quality factor wafer-level bondwire spiral inductor

AU - Lin, Kuei Cheng

AU - Chiou, Hwann Kaeo

AU - Wu, Po Chang

AU - Chen, Wei Hsien

AU - Ko, Chun Lin

AU - Juang, Ying Zong

PY - 2013

Y1 - 2013

N2 - A complementary metal oxide semiconductor (CMOS) power amplifier (PA) using a wafer-level bondwire spiral inductor with high-quality factor (Q) is presented. The inductor is made by three top metal traces connected with bondwire loops above the CMOS chip. The proposed inductor with 2.75-nH inductance achieves a Q of 18, which is three times as much as that of a conventional CMOS standard spiral inductor at 2.4 GHz. The Q of the inductor is over 15 from 2 to 14 GHz, which can cover the frequency band of wireless sensor network and worldwide interoperability for microwave access applications. The output power and power-added efficiency of the PA with the inductor are improved by 1.5 dBm and 7% as compared with those of the fully integrated CMOS PA, respectively.

AB - A complementary metal oxide semiconductor (CMOS) power amplifier (PA) using a wafer-level bondwire spiral inductor with high-quality factor (Q) is presented. The inductor is made by three top metal traces connected with bondwire loops above the CMOS chip. The proposed inductor with 2.75-nH inductance achieves a Q of 18, which is three times as much as that of a conventional CMOS standard spiral inductor at 2.4 GHz. The Q of the inductor is over 15 from 2 to 14 GHz, which can cover the frequency band of wireless sensor network and worldwide interoperability for microwave access applications. The output power and power-added efficiency of the PA with the inductor are improved by 1.5 dBm and 7% as compared with those of the fully integrated CMOS PA, respectively.

KW - Bondwire loop

KW - complementary metal oxide semiconductor (CMOS)

KW - power added efficiency (PAE)

KW - power amplifier (PA)

KW - quality factor (Q)

KW - spiral inductor

UR - http://www.scopus.com/inward/record.url?scp=84881476491&partnerID=8YFLogxK

U2 - 10.1109/TCPMT.2012.2227260

DO - 10.1109/TCPMT.2012.2227260

M3 - 期刊論文

AN - SCOPUS:84881476491

SN - 2156-3950

VL - 3

SP - 1286

EP - 1292

JO - IEEE Transactions on Components, Packaging and Manufacturing Technology

JF - IEEE Transactions on Components, Packaging and Manufacturing Technology

IS - 8

M1 - 6384719

ER -

2.4-GHz complementary metal oxide semiconductor power amplifier using high-quality factor wafer-level bondwire spiral inductor

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