@article{018cb2d5658c4b4eae5f9bbae5b6e569,
title = "1.6 A GaN Schottky rectifiers on bulk GaN substrates",
abstract = "Large area bulk GaN rectifiers with implanted p+ guard rings were fabricated using additional dielectric overlap passivation. The devices were packaged to avoid self-heating at large operating currents. A forward current of 1.65 A was achieved in pulsed voltage mode, a record for GaN rectifiers. The on-state resistance was 3.7 mΩcm2.",
keywords = "Bulk substrate, GaN, HVPE, Rectifier, Schottky, Thermal package",
author = "Johnson, {J. W.} and B. Lou and F. Ren and D. Palmer and Pearton, {S. J.} and Park, {S. S.} and Park, {Y. J.} and Chyi, {J. I.}",
note = "Funding Information: The work at UF is partially supported by NSF grant DMR 0101438.",
year = "2002",
month = jun,
doi = "10.1016/S0038-1101(01)00339-2",
language = "???core.languages.en_GB???",
volume = "46",
pages = "911--913",
journal = "Solid-State Electronics",
issn = "0038-1101",
number = "6",
}