1.6 A GaN Schottky rectifiers on bulk GaN substrates

J. W. Johnson, B. Lou, F. Ren, D. Palmer, S. J. Pearton, S. S. Park, Y. J. Park, J. I. Chyi

研究成果: 雜誌貢獻期刊論文同行評審

14 引文 斯高帕斯(Scopus)

摘要

Large area bulk GaN rectifiers with implanted p+ guard rings were fabricated using additional dielectric overlap passivation. The devices were packaged to avoid self-heating at large operating currents. A forward current of 1.65 A was achieved in pulsed voltage mode, a record for GaN rectifiers. The on-state resistance was 3.7 mΩcm2.

原文???core.languages.en_GB???
頁(從 - 到)911-913
頁數3
期刊Solid-State Electronics
46
發行號6
DOIs
出版狀態已出版 - 6月 2002

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