1.55 μm emission from InAs quantum dots grown on GaAs

Tung Po Hsieh; Pei Chin Chiu; Jen Inn Chyi; Nien Tze Yeh; Wen Jeng Ho; Wen Hao Chang; Tzu Min Hsu

doi:10.1063/1.2099536

1.55 μm emission from InAs quantum dots grown on GaAs

Tung Po Hsieh, Pei Chin Chiu, Jen Inn Chyi, Nien Tze Yeh, Wen Jeng Ho, Wen Hao Chang, Tzu Min Hsu

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

25 引文斯高帕斯（Scopus）

摘要

We report a comparative study on the growth of InAs quantum dots (QDs) on GaAs by metalorganic chemical vapor deposition using triethylgallium (TEGa) and trimethylgallium (TMGa) for the GaAs cap layer. QDs exhibit 1.3 μm photoluminescence (PL) at room temperature, as the GaAs cap layer is directly grown on the QDs. The PL emission can be extended to 1.49 μm when an In0.25 Ga0.75 As overgrown layer is inserted between the cap layer and the InAs QDs. The use of TMGa or TEGa for the growth of the GaAs cap layer is essential for a further increase in the emission wavelength of the InAs QDs. Strong PL emission at 1.55 μm with a linewidth of 28 meV can be obtained as the GaAs cap layer is grown by TEGa, while the optical properties degrade severely when using TMGa.

原文	???core.languages.en_GB???
文章編號	151903
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	87
發行號	15
DOIs	https://doi.org/10.1063/1.2099536
出版狀態	已出版 - 10 10月 2005

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10.1063/1.2099536

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@article{b0c70bb7f04d4086b2199e08cfa8e4b4,

title = "1.55 μm emission from InAs quantum dots grown on GaAs",

abstract = "We report a comparative study on the growth of InAs quantum dots (QDs) on GaAs by metalorganic chemical vapor deposition using triethylgallium (TEGa) and trimethylgallium (TMGa) for the GaAs cap layer. QDs exhibit 1.3 μm photoluminescence (PL) at room temperature, as the GaAs cap layer is directly grown on the QDs. The PL emission can be extended to 1.49 μm when an In0.25 Ga0.75 As overgrown layer is inserted between the cap layer and the InAs QDs. The use of TMGa or TEGa for the growth of the GaAs cap layer is essential for a further increase in the emission wavelength of the InAs QDs. Strong PL emission at 1.55 μm with a linewidth of 28 meV can be obtained as the GaAs cap layer is grown by TEGa, while the optical properties degrade severely when using TMGa.",

author = "Hsieh, {Tung Po} and Chiu, {Pei Chin} and Chyi, {Jen Inn} and Yeh, {Nien Tze} and Ho, {Wen Jeng} and Chang, {Wen Hao} and Hsu, {Tzu Min}",

note = "Funding Information: This work was partially supported by the National Science Council of the Republic of China under Contract Nos. NSC-92-2215-E-008-006 and NSC-92-2120-M-008-001, and the Center for Nano Science and Technology of the University System of Taiwan.",

year = "2005",

month = oct,

day = "10",

doi = "10.1063/1.2099536",

language = "???core.languages.en_GB???",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "15",

}

TY - JOUR

T1 - 1.55 μm emission from InAs quantum dots grown on GaAs

AU - Hsieh, Tung Po

AU - Chiu, Pei Chin

AU - Chyi, Jen Inn

AU - Yeh, Nien Tze

AU - Ho, Wen Jeng

AU - Chang, Wen Hao

AU - Hsu, Tzu Min

N1 - Funding Information: This work was partially supported by the National Science Council of the Republic of China under Contract Nos. NSC-92-2215-E-008-006 and NSC-92-2120-M-008-001, and the Center for Nano Science and Technology of the University System of Taiwan.

PY - 2005/10/10

Y1 - 2005/10/10

N2 - We report a comparative study on the growth of InAs quantum dots (QDs) on GaAs by metalorganic chemical vapor deposition using triethylgallium (TEGa) and trimethylgallium (TMGa) for the GaAs cap layer. QDs exhibit 1.3 μm photoluminescence (PL) at room temperature, as the GaAs cap layer is directly grown on the QDs. The PL emission can be extended to 1.49 μm when an In0.25 Ga0.75 As overgrown layer is inserted between the cap layer and the InAs QDs. The use of TMGa or TEGa for the growth of the GaAs cap layer is essential for a further increase in the emission wavelength of the InAs QDs. Strong PL emission at 1.55 μm with a linewidth of 28 meV can be obtained as the GaAs cap layer is grown by TEGa, while the optical properties degrade severely when using TMGa.

AB - We report a comparative study on the growth of InAs quantum dots (QDs) on GaAs by metalorganic chemical vapor deposition using triethylgallium (TEGa) and trimethylgallium (TMGa) for the GaAs cap layer. QDs exhibit 1.3 μm photoluminescence (PL) at room temperature, as the GaAs cap layer is directly grown on the QDs. The PL emission can be extended to 1.49 μm when an In0.25 Ga0.75 As overgrown layer is inserted between the cap layer and the InAs QDs. The use of TMGa or TEGa for the growth of the GaAs cap layer is essential for a further increase in the emission wavelength of the InAs QDs. Strong PL emission at 1.55 μm with a linewidth of 28 meV can be obtained as the GaAs cap layer is grown by TEGa, while the optical properties degrade severely when using TMGa.

UR - http://www.scopus.com/inward/record.url?scp=28344445874&partnerID=8YFLogxK

U2 - 10.1063/1.2099536

DO - 10.1063/1.2099536

M3 - 期刊論文

AN - SCOPUS:28344445874

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151903

ER -

1.55 μm emission from InAs quantum dots grown on GaAs

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