15-60 GHz asymmetric broadside coupled balun in 0.18 μm CMOS technology

H. K. Chiou; T. Y. Yang; Y. C. Hsu; S. G. Lin; Y. Z. Juang

doi:10.1049/el:20071200

15-60 GHz asymmetric broadside coupled balun in 0.18 μm CMOS technology

H. K. Chiou, T. Y. Yang, Y. C. Hsu, S. G. Lin, Y. Z. Juang

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

A 15-60GHz asymmetric broadside coupled balun fabricated in the standard TSMC 0.18m CMOS process is demonstrated. Using the broadside tight coupling technique, the balun is achieved with wide bandwidth and low insertion loss and utilises the inherent three-dimensional multilayer structure in CMOS technology. The balun achieves bandwidth of over 120, the minimum insertion loss is better than 1.1dB, amplitude difference is less than 1dB and phase difference is less than 5° (15-60GHz). The occupied chip area is only 0.06mm².

原文	???core.languages.en_GB???
頁（從 - 到）	1028-1030
頁數	3
期刊	Electronics Letters
卷	43
發行號	19
DOIs	https://doi.org/10.1049/el:20071200
出版狀態	已出版 - 2007

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10.1049/el:20071200

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AU - Lin, S. G.

AU - Juang, Y. Z.

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AB - A 15-60GHz asymmetric broadside coupled balun fabricated in the standard TSMC 0.18m CMOS process is demonstrated. Using the broadside tight coupling technique, the balun is achieved with wide bandwidth and low insertion loss and utilises the inherent three-dimensional multilayer structure in CMOS technology. The balun achieves bandwidth of over 120, the minimum insertion loss is better than 1.1dB, amplitude difference is less than 1dB and phase difference is less than 5° (15-60GHz). The occupied chip area is only 0.06mm2.

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ER -

15-60 GHz asymmetric broadside coupled balun in 0.18 μm CMOS technology

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