1.3 to 1.5 μm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

T. P. Hsieh, N. T. Yeh, P. C. Chiu, K. F. Huang, W. C. Ho, M. C. Wu, J. I. Chyi

研究成果: 雜誌貢獻會議論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this paper, we demonstrated the long wavelength light emission from InAs quantum dots (QDs) directly capped with GaAs or covered with InGaAs strain reducing layer (SRL) grown by metalorganic chemical vapor deposition (MOCVD). These long wavelength QDs are grown by interrupted growth method with AsH3 as V group precursors. 1.3 μm light emission is observed as the QD directly capped with GaAs. By inserting 6 nm In0.25Ga0.75As, longer emission wavelength of 1.49 μm is observed for the InAs quantum dots.

原文???core.languages.en_GB???
頁(從 - 到)456-459
頁數4
期刊Conference Proceedings - International Conference on Indium Phosphide and Related Materials
出版狀態已出版 - 2003
事件2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States
持續時間: 12 5月 200316 5月 2003

指紋

深入研究「1.3 to 1.5 μm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition」主題。共同形成了獨特的指紋。

引用此