In this paper, we demonstrated the long wavelength light emission from InAs quantum dots (QDs) directly capped with GaAs or covered with InGaAs strain reducing layer (SRL) grown by metalorganic chemical vapor deposition (MOCVD). These long wavelength QDs are grown by interrupted growth method with AsH3 as V group precursors. 1.3 μm light emission is observed as the QD directly capped with GaAs. By inserting 6 nm In0.25Ga0.75As, longer emission wavelength of 1.49 μm is observed for the InAs quantum dots.
|頁（從 - 到）||456-459|
|期刊||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|出版狀態||已出版 - 2003|
|事件||2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States|
持續時間: 12 5月 2003 → 16 5月 2003