摘要
Al0.2Ga0.8As/In0.25Ga0.75As pseudomorphic high electron mobility transistors (PHEMTs) with a 0.2-μm gate length have been fabricated. Based on a shadow deposition technique, the sub-half-micron gate length technology using optical lithography has been developed. This process exhibits large cross-sectional area of the gate to reduce the gate resistance of devices. The gate resistance of 46 Ω/mm of gate width was obtained for a 5000 A thick Ti/Au gate. In addition, a PHEMT fabricated with this technique yielded cut-off frequency of fT = 36 GHz and maximum osculation frequency of fmax=93 GHz.
原文 | ???core.languages.en_GB??? |
---|---|
DOIs | |
出版狀態 | 已出版 - 1994 |
事件 | 1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan 持續時間: 12 7月 1994 → 15 7月 1994 |
???event.eventtypes.event.conference???
???event.eventtypes.event.conference??? | 1994 International Electron Devices and Materials Symposium, EDMS 1994 |
---|---|
國家/地區 | Taiwan |
城市 | Hsinchu |
期間 | 12/07/94 → 15/07/94 |