0.2 μm AlGaAs/InGaAs pseudomorphic HEMT fabricated by optical lithography

Chu Dong Chen, Shiow Jen Chen, Yuan Tzay Chen, Tien Min Chuang, Ming Fon Huang, Feng Yuh Juang, Chung Chi Chang, Yi Jen Chan, Jen Inn Chyi

研究成果: 會議貢獻類型會議論文同行評審

摘要

Al0.2Ga0.8As/In0.25Ga0.75As pseudomorphic high electron mobility transistors (PHEMTs) with a 0.2-μm gate length have been fabricated. Based on a shadow deposition technique, the sub-half-micron gate length technology using optical lithography has been developed. This process exhibits large cross-sectional area of the gate to reduce the gate resistance of devices. The gate resistance of 46 Ω/mm of gate width was obtained for a 5000 A thick Ti/Au gate. In addition, a PHEMT fabricated with this technique yielded cut-off frequency of fT = 36 GHz and maximum osculation frequency of fmax=93 GHz.

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DOIs
出版狀態已出版 - 1994
事件1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
持續時間: 12 7月 199415 7月 1994

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???event.eventtypes.event.conference???1994 International Electron Devices and Materials Symposium, EDMS 1994
國家/地區Taiwan
城市Hsinchu
期間12/07/9415/07/94

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