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奈米粒子裡轉移電荷對催化性質的效應(2/2)
Luo, Meng-Fan
(PI)
物理學系
概覽
指紋
研究成果
(2)
指紋
探索此專案觸及的研究主題。這些標籤是根據基礎獎勵/補助款而產生。共同形成了獨特的指紋。
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Keyphrases
Activation Barrier
10%
Activation Reaction
10%
Active Center
16%
Active Surface
16%
Annealing
25%
Annealing Treatment
50%
Ar Ion Bombardment
25%
Ar+ Bombardment
16%
Barrier Energy
10%
Basal Plane
16%
Catalytic Properties
50%
Charge Transfer
10%
Copper(II) Oxide
10%
Cu(111)
10%
Defect Density
50%
Defect-free Surface
25%
Density Functional Calculations
10%
Electronic Applications
25%
Electronic Structure
20%
Fermi Level
10%
Few-layer
25%
Formaldehyde
16%
Growth Conditions
25%
Interlayer Transition
25%
Ion Bombardment
50%
Layered Transition Metal Dichalcogenides
50%
Localized Electrons
20%
Metal Clusters
10%
Metal Substrate
20%
Methane-hydrogen Mixture
16%
Methanol
50%
Methanol Decomposition
50%
Molecular Hydrogen
16%
Nanoclusters
50%
Nonlocalized
20%
Optoelectronic Applications
25%
Oxidation Degree
16%
Oxide Film
10%
Oxide Thickness
20%
PdTe2
25%
Perfect Surface
50%
Precision Control
10%
Probing Techniques
10%
Pt Nanoclusters
10%
PtTe2
75%
Reaction Energy
10%
Reaction Probability
16%
Rh Nanoclusters
10%
Step Processes
25%
Strong Correlation
10%
Subsequent Annealing
25%
Surface Defects
66%
Surface Density
10%
Surface Electronic Structure
20%
Surface Intermediates
16%
Surface Probe
10%
Surface Reaction
10%
System Monitoring
10%
Te Vacancy
58%
Transferred Charge
50%
Transition Metal Dichalcogenide Materials
50%
Transition Metal Dichalcogenides
66%
Tunneling
10%
Two Dimensional Materials
25%
Two Dimensional Structure
16%
Two-electron
10%
Ultra-high Vacuum
10%
Under-coordinated Atoms
16%
Engineering
2D Material
10%
Active Surface
50%
Basal Plane
50%
Bombardment
50%
Catalytic Property
50%
Defect Density
20%
Dimensional Structure
50%
Electronic State
33%
Energy Levels
33%
Fermi Level
8%
Free Surface
10%
Growth Condition
10%
Ion Implantation
50%
Methane
50%
Model System
8%
Molecular Hydrogen
50%
Nanoclusters
50%
Optoelectronics
10%
Oxide Film
8%
Oxide Thickness
16%
Probe Surface
8%
Step Process
10%
Surface Defect
70%
Transition Metal Dichalcogenide
100%
Tunnel
8%
Tunnel Construction
8%
Two Dimensional
50%
Material Science
Annealing
10%
Defect Density
20%
Density
8%
Energy Levels
33%
Ion Bombardment
50%
Magnesium Oxide
8%
Nanoclusters
50%
Oxidation Reaction
12%
Oxide Compound
16%
Oxide Film
8%
Surface (Surface Science)
95%
Surface Defect
32%
Surface Reaction
8%
Transition Metal Dichalcogenide
62%
Two-Dimensional Material
10%