利用化學氣相沉積法合成黑磷烯二維材料及其電傳輸性質研究與元件應用(1/3)(3/3)

Keyphrases

1. 2D Materials 15%
2. 2D Phosphorene 18%
3. 2D Semiconductors 9%
4. Acceleration Energy 5%
5. Air-stable 5%
6. All-solid 5%
7. Alternative Power Source 5%
8. Ambient Conditions 9%
9. Areal Capacitance 8%
10. As-grown 5%
11. Au Thin Film 5%
12. Bending Deformation 5%
13. Black Phosphorus 36%
14. Capacitance 8%
15. Chemical Vapor Deposited (CVD) Graphene 10%
16. Cm(III) 15%
17. Compatible Process 5%
18. Composite Electrode 5%
19. Controllable Doping 5%
20. Costing Methods 8%
21. Critical Roads 5%
22. Crystal Defects 5%
23. Crystallinity 5%
24. Defect Formation 5%
25. Device Application 18%
26. Diffuser 7%
27. Diffusion Path 5%
28. Discharge Power 5%
29. Doped Graphene 36%
30. Doping Concentration 5%
31. Doping Configuration 5%
32. Doping Technology 5%
33. Electrical Characterization 36%
34. Electrical Performance 5%
35. Electrical Properties 32%
36. Electrochemically Exfoliated Graphene 17%
37. Electrolyte 8%
38. Electron Acceleration 5%
39. Energy Density 8%
40. Energy Storage 36%
41. Fabrication Methods 5%
42. Field-effect Transistors 9%
43. Flexible Supercapacitor 5%
44. Fluorinated 9%
45. Fluorination 36%
46. Graphene 39%
47. Graphene Electrodes 9%
48. Graphene-based Materials 13%
49. Graphene-carbon Nanotubes 36%
50. Ground Glass 36%
51. Hierarchical Electrode 36%
52. High Carrier Mobility 7%
53. High Charge-discharge Rates 5%
54. High Concentration 5%
55. High Cost 5%
56. High Cyclic Stability 5%
57. High Energy 5%
58. High Energy Density 36%
59. High Flexibility 5%
60. High Mobility 5%
61. High Stability 36%
62. High Time 5%
63. High-throughput 5%
64. Holographic multiplexing 7%
65. In-situ Cleaning 36%
66. Increased Demand 5%
67. Ion Implantation 36%
68. Ion Implanter 10%
69. Ion Transport 17%
70. Logic Devices 5%
71. Long-term Stability 9%
72. Low Damage 36%
73. Low Defect Density 5%
74. Low Energy Density 5%
75. Low-energy Ion Implantation 5%
76. Mechanical Flexibility 7%
77. Mechanical Operation 5%
78. Micro-supercapacitors 36%
79. Multi-walled Carbon Nanotubes (MWCNTs) 5%
80. Multiple Connections 5%
81. Multiplexing 36%
82. N-doped Graphene 36%
83. Nanocatalyst 36%
84. Nanoelectronics 15%
85. On-chip Electronics 5%
86. Operation Stability 5%
87. Optical Data Storage 36%
88. Optronic 5%
89. Order of Magnitude 6%
90. Output Current 5%
91. Output Voltage 5%
92. P-type 10%
93. Passivation 18%
94. Perfluorosulfonic Acid 9%
95. Performance Enhancement 73%
96. Phase Coding 36%
97. Phosphorene 18%
98. Phosphorus Doping 36%
99. Pore Architecture 6%
100. Pore Density 6%
101. Pore Structure 36%
102. Porosity 6%
103. Post-annealing 5%
104. Power Density 13%
105. Protection Layer 5%
106. Random Phase 36%
107. Rationally Designed 13%
108. Reconstructed Image 7%
109. Residue-free 5%
110. Semiconducting Graphene 5%
111. Signal-to-noise Ratio 14%
112. Solid State 36%
113. Spectroscopic Characterization 36%
114. Storage Capacity 36%
115. Transistor 42%
116. Transport Capability 5%
117. Transport Efficiency 9%
118. Tunable Work Function 5%
119. Two Dimensional Materials 9%
120. Typical Value 7%
121. Ultra-clean 5%
122. Volume Hologram 36%
123. Volumetric Capacitance 5%
124. Wearable Devices 5%

Material Science

1. Annealing 5%
2. Capacitance 49%
3. Carbon Nanotube 36%
4. Carrier Mobility 18%
5. Chemical Vapor Deposition 13%
6. Coating Process 12%
7. Corrosion 12%
8. Covalent Bond 12%
9. Density 36%
10. Electronic Circuit 12%
11. Energy Density 43%
12. Field Effect Transistor 36%
13. Film 11%
14. Graphene 100%
15. Heterojunction 16%
16. Holey Graphene 36%
17. Hydrophobicity 12%
18. Ion Implantation 36%
19. Pore Structure 36%
20. Spin Coating 12%
21. Thin Films 12%
22. Transistor 46%
23. Two-Dimensional Material 45%