連續柴氏長晶法成長矽單晶過程雜質輸送之數值模擬研究(1/3)

Physics & Astronomy

1. ingots 100%
2. silicon 98%
3. Czochralski method 75%
4. crucibles 68%
5. crystal growth 57%
6. impurities 40%
7. supplying 38%
8. oxygen 36%
9. pulling 35%
10. defects 34%
11. heat transmission 33%
12. minority carriers 32%
13. crystals 29%
14. point defects 29%
15. furnaces 27%
16. optimization 20%
17. electrical resistivity 19%
18. geometry 17%
19. temperature 9%