LED固晶封裝製程對GaN薄膜應力及滯彈效應研究(2/3)

Keyphrases

1. Growth Direction Control 100%
2. ZnO Nanorods 100%
3. AZO Seed Layer 100%
4. Aluminum-doped Zinc Oxide 100%
5. Indium Tin Oxide 100%
6. Cut Spaces 57%
7. LED Die 50%
8. Die Attachment 50%
9. Layer Behavior 50%
10. GaN-based LED 50%
11. Anelastic Behavior 50%
12. GaN Films 37%
13. Attachment Process 37%
14. ITO Layer 28%
15. Growth Direction 28%
16. Hexagonal ZnO 28%
17. Anelastic Strain 25%
18. Photoelectric Properties 25%
19. Vertical ZnO Nanorods 14%
20. Dilute HCl 14%
21. High Crystallinity 14%
22. Room Temperature 14%
23. Surface Microstructure 14%
24. Microstructure 14%
25. C-plane 14%
26. Vertical Growth 14%
27. C Substrate 14%
28. HCl Solution 14%
29. Hydrothermal Method 14%
30. Edge Surface 14%
31. Substrate Temperature 14%
32. Thermal Dissipation 12%
33. LED chip 12%
34. Device Reliability 12%
35. Energy Levels 12%
36. Film Quality 12%
37. Power Dissipation Efficiency 12%
38. Field-induced 12%
39. Au-Sn Bonding 12%
40. Layer Thickness 12%
41. Bonding Layer 12%
42. Lighting Source 12%
43. Dissipation Device 12%
44. Piezoelectric Field 12%

Physics

1. Indium 100%
2. ZnO Nanorods 100%
3. Zinc Oxide 100%
4. Room Temperature 12%
5. Hydrothermal Synthesis 12%
6. Crystallinity 12%