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LED固晶封裝製程對GaN薄膜應力及滯彈效應研究(3/3)
Liu, Cheng-Yi
(PI)
化學工程與材料工程學系
概覽
指紋
研究成果
(5)
指紋
探索此專案觸及的研究主題。這些標籤是根據基礎獎勵/補助款而產生。共同形成了獨特的指紋。
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Keyphrases
Organic-inorganic
87%
F8T2
87%
Annealing
64%
Region Effect
58%
Photocurrent Generation
58%
Annealing Atmosphere
58%
CO Gas
58%
Pt-TiO2
58%
Space Charge Region
58%
Surface Space Charge
58%
P-n Junction
58%
Photodiode
58%
Light-emitting
58%
N2 Gas Flow
58%
Surface Morphology
58%
Heterojunction
58%
Annealing Effect
58%
Crystal Quality
58%
SnO2
58%
Flow Surface
58%
AlN Buffer Layer
58%
TiO2 Thin Film
48%
AlN Film
46%
GaN-based LED
29%
Anelastic Behavior
29%
LED Die
29%
Die Attachment
29%
Mechanism Efficiency
29%
Layer Behavior
29%
O2 Partial Pressure
29%
P-GaN
29%
P-type
29%
Yellow Emission
29%
Quantum Efficiency
29%
Gallium Nitride
29%
Attachment Process
21%
GaN Films
21%
White Light
21%
N2 Atmosphere
21%
Frenkel Exciton
17%
Photocarriers
17%
N2 Annealing
17%
Anelastic Strain
14%
Photoelectric Properties
14%
Valence Band
12%
Light-emitting Devices
12%
Yellow-green Light
11%
Junction Interface
11%
III-nitrides
11%
Outgassing
11%
Surface Roughness
11%
Glass Substrate
11%
Nitrided Layer
11%
Electroluminescence
9%
White Light Emission
9%
Defect Reaction
9%
Ti2+
9%
As-deposited
9%
Biased Voltage
9%
Diode Characteristics
9%
Substitution Reaction
9%
I-V Curve
9%
Photolithography
9%
Magnetron Sputtering Deposition
9%
Band Gap
9%
DC Reactive Magnetron Sputtering
9%
Conduction Mechanism
9%
Lift-off
9%
Annealing Temperature
9%
Low Resistivity
9%
Seebeck Effect
9%
Ti4+
9%
Reaction Mechanism
9%
Turn-on Voltage
9%
Rutile
9%
Hole Carriers
8%
Potential Barrier
8%
Device Reliability
7%
Energy Levels
7%
Au-Sn Bonding
7%
Bonding Layer
7%
Lighting Source
7%
Dissipation Device
7%
Thermal Dissipation
7%
LED chip
7%
Field-induced
7%
Layer Thickness
7%
Film Quality
7%
Power Dissipation Efficiency
7%
Piezoelectric Field
7%
International Commissions
5%
Green Light Emission
5%
Screw Dislocation
5%
CIE Coordinates
5%
Coulombic Interaction
5%
Step-terrace Structure
5%
UV Photodetector
5%
Interface Form
5%
Rocking Curve
5%
Electrical Potential
5%
Oxygen Vacancy Concentration
5%
Carrier Accumulation
5%
High Thermals
5%
Yellow-green Emission
5%
High-flow Oxygen
5%
Thick Film
5%
As-grown
5%
Oxygen Atmosphere
5%
Surface Layer
5%
Blue Light
5%
Thick Layer
5%
Large Volume
5%
Energy Barrier
5%
Bithiophene
5%
Close-enough
5%
Surface Oxidation
5%
Thermal Decomposition
5%
Dislocation Density
5%
High Mobility
5%
Material Science
Surface (Surface Science)
100%
Indium Tin Oxide
58%
Titanium Dioxide
58%
Theoretical Calculation
58%
Heterojunction
58%
Aluminum Nitride
58%
Buffer Layer
58%
Surface Morphology
58%
Gas Flow
58%
Film
47%
Electroluminescence
38%
Light-Emitting Diode
34%
Gallium Nitride
29%
Thin Films
26%
Annealing
24%
Thick Films
11%
Oxygen Vacancy
11%
Nitride Compound
8%
Surface Roughness
8%
Magnetron Sputtering
5%
Current-Voltage Characteristic
5%
Electrical Resistivity
5%
Engineering
Space Charge Region
58%
Photocurrent
58%
Buffer Layer
58%
Surface Morphology
58%
Gas Flow
58%
Crystal Quality
58%
Photodiode
58%
Quantum Efficiency
29%
Film Quality
29%
Nitride
29%
Bonding Layer
29%
Thermal Dissipation
29%
Layer Thickness
29%
Piezoelectric
29%
Nitride Layer
29%
Glass Substrate
19%
Emitting Device
14%
Valence Band
14%
Original Surface
14%
Dislocation Density
14%
Screw Dislocation
14%
Surface Layers
14%
Electrical Potential
9%
Oxygen Vacancy
9%
Experimental Result
9%
Thick Layer
9%
Experimental Observation
9%
Photometer
9%
Luminaires
9%