仿生運算於AI晶片之開發與應用：建構通用型類神經網路技術平台與異質晶片整合於圖片辨識之應用(1/3)

Keyphrases

1. 3-bits 100%
2. Non-volatile Memory 70%
3. Hafnium Oxynitride 66%
4. Storage Capability 66%
5. MOSFET 66%
6. Resistive Gate 66%
7. Cell Storage 66%
8. HfO2 66%
9. Gate Metal 66%
10. Metal-dielectric 46%
11. Fin Field-effect Transistor (FinFET) 40%
12. Technology Platform 33%
13. Network Technology 33%
14. Neuron Network 33%
15. Neuromorphic Computing 33%
16. Image Recognition 33%
17. AI Applications 33%
18. AI chip 33%
19. Hetero-integration 33%
20. True Randomness 33%
21. Platform Integration 33%
22. Random Trap Fluctuation 33%
23. 14nm FinFET 33%
24. 3D Architecture 33%
25. Physical Unclonable Function 33%
26. High Density 33%
27. Negative Bias Temperature Instability 33%
28. Memory Wall 33%
29. Drain Current 30%
30. Top Electrode 20%
31. Bottom Electrode 17%
32. Electrode Metal 13%
33. Dielectric Layer 13%
34. Resistance Value 13%
35. Hamming Distance 13%
36. Conductance 11%
37. Linearly Tunable 7%
38. FinFET Devices 7%
39. Synapse Function 7%
40. Neuron Function 7%
41. Circuitry 7%
42. Activation Function 7%
43. Gate Electrode 7%
44. Neuro Network 7%
45. Program Speed 6%
46. Entropy Source 6%
47. Bipolar Operation 6%
48. Switching Layer 6%
49. Fowler-Nordheim 6%
50. Gate Dielectric 6%
51. Metal Cans 6%
52. Resistance to Change 6%
53. Threshold Voltage 6%
54. Non-volatile 6%
55. External Voltage 6%
56. Pulsed Operation 6%
57. Resistance Switching 6%
58. High Resistance State 6%
59. Low Resistance State 6%
60. Hafnium Oxide 6%
61. Endurance Cycle 6%
62. Retention Test 6%
63. High Performance Computing 6%
64. Current Variation 6%
65. Memory Window 6%
66. Computing Efficiency 6%
67. 3D Integration 6%
68. Transistor 6%
69. Capacitance 6%
70. Bit Error Rate 6%
71. NIST Tests 6%
72. Program Efficiency 6%
73. Memory Hierarchy 6%
74. Hamming Weight 6%
75. Ultra-high Density 6%
76. High Temperature 6%
77. Lifetime Prediction 6%

Engineering

1. Nonvolatile Memory 70%
2. Metal-Oxide-Semiconductor Field-Effect Transistor 66%
3. Resistive 66%
4. Dielectrics 46%
5. Network Technology 33%
6. Memory Hierarchy 33%
7. Negative-Bias Temperature Instability 33%
8. Artificial Intelligence 33%
9. Current Drain 30%
10. Dielectric Layer 13%
11. Hamming Distance 13%
12. Activation Function 12%
13. Gate Electrode 8%
14. Source Entropy 6%
15. Bipolar Operation 6%
16. Gate Dielectric 6%
17. Resistance Change 6%
18. Applied Voltage 6%
19. High Resistance State 6%
20. Applied Stress 6%
21. Bit Error Rate 6%