適用於毫米波功率放大器之高功率氮化鋁銦/氮化鎵高墊子遷移率電晶體開發(3/3)

Keyphrases

1. Power Transistors 100%
2. GaN Heterostructure 100%
3. High Electron Mobility Transistor 100%
4. Millimeter-wave Amplifier 100%
5. High Power 100%
6. Millimeter Wave Range 50%
7. Packaging Technology 50%
8. GaN Power Device 50%
9. 5G Systems 50%
10. High Current Density Operation 50%
11. 5th Generation Mobile Communication 50%
12. Low Stress 50%
13. GaN-based 50%
14. High Power Density 50%
15. Carrier Frequency 50%
16. Gas Density 50%
17. Feasible Solution 50%
18. Ka-band 50%
19. High Efficiency 50%
20. AlGaN-GaN 50%
21. AlInN 50%
22. AlGaN Layer 50%
23. 2-dimensional Electron Gas (2DEG) 50%
24. T Gate 50%
25. Si Substrate 50%
26. Fabrication Technology 50%
27. Epitaxy 50%
28. Base Station 50%
29. Power Amplifier 50%

Engineering

1. Wave Power 100%
2. Power Amplifier 100%
3. Millimeter Wave 100%
4. Heterojunctions 66%
5. Si Substrate 33%
6. High Current Density 33%
7. Ka-Band 33%
8. Basestation 33%
9. Mobile Communication 33%
10. Two Dimensional 33%
11. Power Density 33%
12. Carrier Frequency 33%
13. Phase Composition 33%
14. Research Group 33%
15. Gas Density 33%
16. Feasible Solution 33%