通訊應用矽晶光電同調收發模組之研究－通訊應用矽晶光電同調收發模組之研究(1/4)

Keyphrases

1. 2-port 12%
2. Active Mode 12%
3. Amplitude Modulation 50%
4. Bias Current 12%
5. Bipolar Transistor 75%
6. Bit Error Ratio 33%
7. Capacitance Model 33%
8. Carrier-induced 12%
9. Cavity Structure 16%
10. Compact Device 12%
11. Device Sizing 12%
12. Device Structure 25%
13. Differential Resistance 41%
14. Driving Voltage 62%
15. Dynamic Operation 37%
16. Efficiency Characteristics 12%
17. Equivalent Circuit Modeling 16%
18. Error-free 16%
19. Fall Time 12%
20. Fast Response 50%
21. Fast Switching Time 25%
22. Forward Bias 25%
23. Gbps 33%
24. High Modulation Efficiency 50%
25. High Temperature Operation 50%
26. Ideal Diode 25%
27. Injected Carriers 25%
28. Injected Current 25%
29. Laser Cavity 16%
30. Limited Bandwidth 16%
31. Low Power Consumption 25%
32. Mach-Zehnder Modulator 25%
33. Modeling Techniques 16%
34. N-of-1 25%
35. On-off Keying 16%
36. Operation Window 25%
37. Optical Bandwidth 16%
38. Optical Insertion Loss 12%
39. Optical Phase 12%
40. Optical Phase Modulator 50%
41. Optical Phase Shifter 100%
42. Optical Waveguides 37%
43. Oxides 50%
44. Parasitic Capacitance 16%
45. Phase Shift 37%
46. Photonics Foundry 50%
47. Plasma Effect 12%
48. Plasma-induced 25%
49. Port Operations 25%
50. Power Consumption 50%
51. Propagation Loss 25%
52. Refractive Index 37%
53. Residual Amplitude Modulation 50%
54. Room Temperature 33%
55. Room Temperature Operation 16%
56. S-parameters 16%
57. Saturation Mode 25%
58. Signal Processing 16%
59. Silicon Photonics 50%
60. Small Footprint 37%
61. Small Power 50%
62. Static Power Consumption 25%
63. Superior Performance 12%
64. Three-port 50%
65. Transmission Performance 16%
66. Transmitter 16%
67. Turn-on Voltage 25%
68. Two-port 29%
69. Ultra-high 50%
70. Ultrafast 50%
71. Vertical-cavity Surface-emitting Laser (VCSEL) 50%
72. Very Low Power 25%
73. Voltage Swing 25%
74. Zn Diffusion 50%
75. Zn Oxide 50%

Engineering

1. Active Mode 16%
2. Amplitude Modulation 75%
3. Bias Operation 16%
4. Bipolar Transistor 83%
5. Bit Error 33%
6. Cavity Surface 50%
7. Compact Device 16%
8. Device Structure 25%
9. Electric Power Utilization 50%
10. Emitter Junction 16%
11. Emitting Laser 50%
12. Equivalent Circuit 16%
13. Fall Time 16%
14. Fast Response 50%
15. Forward Bias 33%
16. High Temperature Operations 50%
17. Induced Change 41%
18. Insertion Loss 16%
19. Laser Cavity 16%
20. Limited Bandwidth 16%
21. Low Power Consumption 25%
22. Measured Output 25%
23. Modulation Efficiency 50%
24. Optical Bandwidth 16%
25. Optical Phase 100%
26. Parasitic Capacitance 16%
27. Phase Modulator 50%
28. Phase Shift 25%
29. Phase Shifters 100%
30. Propagation Loss 25%
31. Refractive Index 41%
32. Refractivity 41%
33. Response Time 50%
34. Room Temperature 50%
35. Scattering Parameters 16%
36. Silicon Photonics 50%
37. Switching Time 25%
38. Voltage Driving 66%
39. Waveguide 41%