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通訊應用矽晶光電同調收發模組之研究-通訊應用矽晶光電同調收發模組之研究(1/4)
Shi, Jin-Wei
(PI)
電機工程學系
概覽
指紋
研究成果
(3)
指紋
探索此專案觸及的研究主題。這些標籤是根據基礎獎勵/補助款而產生。共同形成了獨特的指紋。
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重量
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Keyphrases
Optical Phase Shifter
100%
Bipolar Transistor
75%
Driving Voltage
62%
Optical Phase Modulator
50%
Residual Amplitude Modulation
50%
Fast Response
50%
High Modulation Efficiency
50%
Silicon Photonics
50%
Photonics Foundry
50%
Three-port
50%
Small Power
50%
Amplitude Modulation
50%
Power Consumption
50%
Ultra-high
50%
Vertical-cavity Surface-emitting Laser (VCSEL)
50%
Oxides
50%
Ultrafast
50%
High Temperature Operation
50%
Zn Oxide
50%
Zn Diffusion
50%
Differential Resistance
41%
Phase Shift
37%
Optical Waveguides
37%
Small Footprint
37%
Refractive Index
37%
Dynamic Operation
37%
Bit Error Ratio
33%
Gbps
33%
Capacitance Model
33%
Room Temperature
33%
Two-port
29%
Saturation Mode
25%
Ideal Diode
25%
Low Power Consumption
25%
Operation Window
25%
Forward Bias
25%
Fast Switching Time
25%
Propagation Loss
25%
Very Low Power
25%
Injected Current
25%
Mach-Zehnder Modulator
25%
Injected Carriers
25%
Voltage Swing
25%
N-of-1
25%
Static Power Consumption
25%
Plasma-induced
25%
Port Operations
25%
Turn-on Voltage
25%
Device Structure
25%
Signal Processing
16%
Optical Bandwidth
16%
Laser Cavity
16%
On-off Keying
16%
Transmission Performance
16%
Cavity Structure
16%
Equivalent Circuit Modeling
16%
Error-free
16%
Parasitic Capacitance
16%
S-parameters
16%
Room Temperature Operation
16%
Modeling Techniques
16%
Transmitter
16%
Limited Bandwidth
16%
2-port
12%
Fall Time
12%
Active Mode
12%
Optical Phase
12%
Efficiency Characteristics
12%
Plasma Effect
12%
Superior Performance
12%
Carrier-induced
12%
Bias Current
12%
Optical Insertion Loss
12%
Device Sizing
12%
Compact Device
12%
Engineering
Optical Phase
100%
Phase Shifters
100%
Bipolar Transistor
83%
Amplitude Modulation
75%
Voltage Driving
66%
Modulation Efficiency
50%
Response Time
50%
Silicon Photonics
50%
Fast Response
50%
Electric Power Utilization
50%
Phase Modulator
50%
Cavity Surface
50%
Emitting Laser
50%
High Temperature Operations
50%
Room Temperature
50%
Waveguide
41%
Refractive Index
41%
Induced Change
41%
Refractivity
41%
Forward Bias
33%
Bit Error
33%
Low Power Consumption
25%
Measured Output
25%
Switching Time
25%
Device Structure
25%
Propagation Loss
25%
Phase Shift
25%
Emitter Junction
16%
Active Mode
16%
Bias Operation
16%
Compact Device
16%
Insertion Loss
16%
Fall Time
16%
Optical Bandwidth
16%
Limited Bandwidth
16%
Scattering Parameters
16%
Equivalent Circuit
16%
Parasitic Capacitance
16%
Laser Cavity
16%