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最適化裸晶光形設計搭配螢光粉塗佈結構達成節能高效率白光LED之開發
Liu, Cheng-Yi
(PI)
化學工程與材料工程學系
概覽
指紋
研究成果
(2)
指紋
探索此專案觸及的研究主題。這些標籤是根據基礎獎勵/補助款而產生。共同形成了獨特的指紋。
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Keyphrases
Sn Substitution
100%
Alunogen
100%
Al-Sn
100%
Self-masking
100%
Tin Oxide Thin Film
100%
Sapphire Substrate
100%
Doped SnO2
100%
Nitrides
100%
P-type
100%
Three-dimensional Pattern
100%
Doped Tin Oxide
100%
Al3+
85%
SnO2 Thin Films
71%
Sulfuric Acid
66%
Three-dimensional (3D)
66%
Sapphire
66%
Sn4+ Substitution
57%
Annealing
57%
White LED
50%
Substitution Reaction
42%
Sapphire Surface
33%
Self-forming
33%
Wet Etching
33%
C-plane
33%
Growth Rate
33%
Sapphire Wafer
33%
Etching Rate
33%
Mask-free
33%
Rate Ratio
33%
Al Doping Concentration
28%
Sn4+
28%
High-Al
28%
Computational Simulation
28%
Al Content
28%
Energy Loss
25%
Light Patterns
25%
Al-doped SnO2
14%
N-impurity
14%
Valence Band Maximum
14%
Al-AlN
14%
Type Conversion
14%
Valence Band
14%
X-ray Photoelectron Spectra
14%
Vienna Ab Initio Simulation Package
14%
Annealing Temperature
14%
Al Impurities
14%
Hole Carriers
14%
High-temperature Annealing
14%
Al Concentration
14%
Outgassing
14%
Photoluminescence
14%
Al-doped
14%
Dopant
14%
High Annealing Temperature
14%
Spectral Analysis
14%
High Temperature
14%
Al Dopant
14%
LED chip
12%
Light Quality
12%
Color Quality
12%
Light Product
12%
Energy Utilities
12%
Temperature Difference
12%
Color Temperature
12%
High Power
12%
Engineering
Nitride
100%
Thin Films
100%
Experimental Observation
100%
Energy Dissipation
50%
Light Pattern
50%
Lighting Product
25%
Highlight
25%
Produce Hole
25%
Al Content
25%
Valence Band
25%
Dopants
25%
Annealing Temperature
25%
Color Temperature
25%
Photoelectron
12%
Band Region
12%
Material Science
Thin Films
100%
Sapphire
100%
Aluminum Nitride
100%
Tin Oxide
100%
Annealing
25%
Doping (Additives)
25%
Wet Etching
16%
Surface (Surface Science)
16%
Ab Initio Simulation
12%
Photoluminescence
12%
X-Ray Photoelectron Spectroscopy
12%