同具二維電子氣(2DEG)和二維電洞氣( 2DHG)之氮化鋁鎵/氮化鎵異質接面場效電晶體

狀態	已完成
有效的開始/結束日期	1/08/15 → 31/07/16

Device characteristics of AlGaN/GaN HEMTs with p-GaN cap layer
Li, C. H., Jiang, Y. C., Tsai, H. C., Zhong, Y. N. & Hsin, Y. M., 2017, 於: ECS Journal of Solid State Science and Technology. 6, 11, p. S3125-S3128
研究成果: 雜誌貢獻 › 編者言
5 引文斯高帕斯（Scopus）
Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias
Hsin, Y. M., Zhong, Y. N. & Liu, Z. W., 5 7月 2017, RFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium. Hanke, A. & Mehta, S. (編輯). Institute of Electrical and Electronics Engineers Inc., p. 144-147 4 p. 7969038. (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).
研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

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