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低維度新穎材料、晶圓級製程與關鍵技術整合於建構前瞻半導體元件之研究-低維度新穎材料、晶圓級製程與關鍵技術整合於建構前瞻半導體元件之研究(2/2)
Su, Ching-Yuan
(PI)
光電科學研究中心
概覽
指紋
研究成果
(2)
指紋
探索此專案觸及的研究主題。這些標籤是根據基礎獎勵/補助款而產生。共同形成了獨特的指紋。
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Keyphrases
2D Materials
100%
Hot Electron Transistor
75%
Broadband Photodetection
75%
Quantum Tunneling
75%
Frequency multiplier
75%
Molybdenite
75%
GaN Heterostructure
75%
Chemical Vapor Deposition
75%
Photodetector
75%
Self-powered
75%
Dual-mode
75%
Frequency Mode
75%
Graphene
75%
Tunneling Devices
50%
Graphene-based Materials
50%
Tunneling Mechanism
50%
Transistor
50%
Bias Voltage
39%
Responsivity
30%
Heterojunction Photodetectors
30%
Photoresponse
30%
Curve Characteristic
24%
Tunneling Transistor
24%
Cryogenic CMOS (Cryo-CMOS)
24%
Vertical Graphene
24%
Device-independent
24%
Complementary Metal Oxide Semiconductor
24%
Quantum Computer
24%
Input Signals
24%
Frequency multiplication
24%
High Efficiency
24%
Quantum Technologies
24%
Frequency Doubler
24%
Frequency Modulation
24%
Nonlinear Resistance
24%
Frequency Modulator
24%
Power Dissipation Efficiency
24%
Low Power Dissipation
24%
Tunable Frequency
24%
R-curve
24%
Frequency Tripler
24%
Wafer Level
21%
1D-2D
21%
Synthesis Technology
21%
2D Semiconductors
21%
Semiconductor Materials
21%
Device Architecture
21%
Molybdenum Disulfide MoS2
15%
MoS2 Photodetector
15%
Self-powered Photodetectors
15%
Manufacturing Industry
15%
Decay Time
15%
Tunneling
15%
Chemical Vapor Deposition Growth
15%
Growth Techniques
15%
Diode Characteristics
15%
Sapphire Substrate
15%
Chemical Vapor Deposition Technique
15%
Van Der Waals Epitaxy
15%
P-GaN
15%
532 Nm Laser
15%
Operational Mechanism
15%
Coverage Rate
15%
Reverse Bias
15%
External Bias
15%
Zero Bias
15%
Specific Detectivity
15%
Tunneling Current
15%
Rise Time
15%
Large-scale Production
15%
Near-infrared
15%
Exceptional Performance
15%
Low Temperature
10%
Physical Limitations
10%
Next-generation Semiconductor
10%
Low-dimensional Materials
10%
3D IC
10%
Cross-domain
10%
Device Integration
10%
Carbon Nanotube Materials
10%
Gate-all-around (GAA) MOSFET
10%
Quantum Transport Calculations
10%
Wafer
10%
Innovative Thinking
10%
Low-dimensional Semiconductors
10%
Silicon-based Semiconductors
10%
In Situ Growth
10%
Transportation Properties
10%
Dielectric Materials
10%
1D Materials
10%
Barrier Layer
10%
Semiconductor Process
10%
Single Crystal
10%
Materials Synthesis
10%
Field-effect Transistors
10%
Ultra-low
10%
Integrated Plan
10%
Heterogeneous Integration
10%
2D WS2
10%
Channel Material
10%
Engineering
Tunnel Construction
93%
2D Material
90%
Molybdenum Disulfide
85%
Vapor Deposition
75%
Chemical Vapor Deposition
75%
Heterostructures
75%
Photodetection
75%
Self-Powered
75%
Frequency Multiplier
75%
Hot Electron
75%
Graphene
75%
Photometer
46%
Semiconductor Material
32%
Photodetector
28%
Bias Voltage
24%
Responsivity
18%
Heterojunctions
18%
Quantum Computer
15%
Resistance Curve
15%
Energy Dissipation
15%
Complementary Metal-Oxide-Semiconductor
15%
Input Signal
15%
Emitter Voltage
15%
Base Voltage
15%
Frequency Modulation
15%
Carbon Nanotube
10%
Dielectrics
10%
High Technology
10%
Low-Temperature
10%
Controllability
10%
Field-Effect Transistor
10%
Field Effect Transistor
10%
Barrier Layer
10%
Sapphire Substrate
9%
Rise Time
9%
Reverse Bias
9%
Decay Time
9%
Mass Production
9%
Material Science
Two-Dimensional Material
93%
Transistor
75%
Chemical Vapor Deposition
75%
Graphene
75%
Heterojunction
75%
Hot Electron
75%
Semiconductor Material
32%
Field Effect Transistor
21%
Sapphire
18%
Complementary Metal-Oxide-Semiconductor Device
18%
Molybdenum
18%
Surface (Surface Science)
18%
Silicon
10%
Device Integration
10%
Carbon Nanotube
10%
Low-K Dielectric
10%
Materials Synthesis
10%
Single Crystal
10%
Dielectric Material
10%