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查看斯高帕斯 (Scopus) 概要
唐 英瓚
助理教授
資訊電機學院
電子郵件
yttang
ee.ncu.edu
tw
網站
https://scholars.ncu.edu.tw/zh/persons/ying-tsang-tang
h-index
332
引文
12
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2009
2026
每年研究成果
概覽
指紋
網路
研究計畫
(2)
研究成果
(39)
資料集
(2)
類似的個人檔案
(1)
指紋
查看啟用 Ying-Tsang Tang 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
HfZrOx
34%
Interfacial Layer
29%
Fin Field-effect Transistor (FinFET)
26%
HfO2
24%
Ferroelectric Field-effect Transistor (FeFET)
23%
Ioff
22%
Memory Window
21%
Carbon Nanotube Field Effect Transistor (CNTFET)
21%
Sub-60 mV/dec
21%
Subthreshold Swing
20%
Transistor
20%
Molybdenite
18%
Double Quantum Dot
17%
Zirconium Dioxide
17%
Wake-up
16%
In-memory
16%
Bias Dependence
16%
Phonons
16%
Highly Reliable
16%
Angstrom
16%
Gate Engineering
16%
Negative Capacitance
16%
Orthorhombic
16%
Ferroelectric Capacitor
15%
Quantum Dots
14%
Orthorhombic Phase
14%
Gate Stack
14%
Metal Gate
14%
Ferroelectric Polarization
13%
Conductance
13%
Tunneling Rate
13%
Electron-phonon Interaction
13%
Energy Efficient
13%
Low Temperature
13%
Storage Capacity
13%
Phase Transition
12%
First-principles Calculations
12%
Technology Node
12%
Ferroelectric HZO
12%
Ferroelectric Memory
12%
HfZrO2
11%
Ferroelectric Layer
10%
Single-molecule Transistor
10%
Hybrid Implants
10%
Fin Type
10%
Plasma Immersion
10%
Doping Technique
10%
Dielectric Layer
10%
Bias Effect
10%
Germanium Quantum Dots
10%
Material Science
Ferroelectric Material
100%
Field Effect Transistor
82%
Transistor
48%
Quantum Dot
42%
Capacitance
35%
Zirconia
32%
Dielectric Material
17%
Nanowire
16%
Annealing
14%
Density
14%
Transition Metal Dichalcogenide
10%
Single Electron Devices
10%
Germanium
10%
Gallium
10%
Indium
10%
Zinc Oxide
10%
Aluminum Oxide
10%
Capacitor
10%
Superlattice
9%
Silicide
8%
Monolayers
7%
Oxygen Vacancy
7%
Thermal Stability
6%
Oxide Compound
5%
Aluminum Nitride
5%
Aluminum Oxynitride
5%
Epitaxy
5%
Hafnium
5%
Carbon Dioxide
5%
Electronic Circuit
5%
Doping (Additives)
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
5%
Thermal Conductivity
5%
Nitride Compound
5%
Phase Interface
5%
Engineering
Field Effect Transistor
42%
Engineering
32%
Quantum Dot
29%
Nodes
26%
Gate Stack
26%
Interfacial Layer
22%
Tunnel Construction
20%
Room Temperature
16%
Inverter
16%
Field-Effect Transistor
16%
Superlattice
14%
Side Wall
12%
Phonon Interaction
10%
Effective Stress Method
10%
Qubit
10%
Electron Devices
10%
Dielectric Layer
10%
Low-Temperature
10%
Single Electron
10%
Strain Effect
10%
Nanowire
10%
Internet-Of-Things
10%
Plasma Treatment
10%
Storage Capacity
10%
Interlayer
10%
Tunnel
10%
Bias Voltage
10%
Operating Voltage
8%
Subthreshold Slope
8%
Barrier Layer
8%
Cell Operation
8%
Gate Oxide
8%
Interface Trap
8%
Implant
7%
Rapid Thermal Annealing
6%
Experimental Observation
6%
Monoclinic
6%
Data Retention
6%
Ten Year
6%
Atomistic Simulation
5%
Aluminum Oxide
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
5%
Thermal Conductivity
5%
Optimization Strategy
5%
Metal Layer
5%
Far-Infrared Laser
5%
Dielectrics
5%
Crystallinity
5%
Interdiffusion
5%
Area Overhead
5%
