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查看斯高帕斯 (Scopus) 概要
唐 英瓚
助理教授
資訊電機學院
電子郵件
yttang
ee.ncu.edu
tw
網站
https://scholars.ncu.edu.tw/zh/persons/ying-tsang-tang
h-index
287
引文
12
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2009
2024
每年研究成果
概覽
指紋
網路
研究計畫
(2)
研究成果
(31)
資料集
(2)
類似的個人檔案
(2)
指紋
查看啟用 Ying-Tsang Tang 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
HfZrOx
36%
Interfacial Layer
30%
Memory Window
28%
Ferroelectric Field-effect Transistor (FeFET)
27%
Ioff
23%
Gate Engineering
22%
Negative Capacitance
22%
Fin Field-effect Transistor (FinFET)
22%
Orthorhombic
22%
Carbon Nanotube Field Effect Transistor (CNTFET)
22%
Sub-60 mV/dec
22%
Molybdenite
19%
Phase Transition
18%
First-principles Calculations
18%
Orthorhombic Phase
18%
Subthreshold Swing
18%
Transistor
18%
Ferroelectric Memory
18%
In-memory
16%
Bias Dependence
16%
Phonons
16%
Antiferroelectric
16%
Highly Reliable
16%
Angstrom
16%
Ferroelectric Polarization
16%
Conductance
15%
Monoclinic
14%
High Strain
14%
Gate Stack
14%
Phase Transformation
14%
Metal Gate
14%
Gate Electric Field
14%
Dielectric Thickness
14%
Tunneling Rate
13%
Electron-phonon Interaction
13%
Energy Efficient
13%
Quantum Dots
13%
Low Temperature
13%
Wake-up
13%
High Performance
12%
Ferroelectric HZO
12%
Ferroelectric Capacitor
12%
Ferroelectric Layer
11%
Single-molecule Transistor
11%
Hybrid Implants
11%
Fin Type
11%
Ferroelectric Transition
11%
Plasma Immersion
11%
Metal Nitrides
11%
Strain-induced Transformation
11%
Material Science
Ferroelectric Material
100%
Field Effect Transistor
74%
Transistor
53%
Quantum Dot
44%
Capacitance
36%
Zirconia
22%
Dielectric Material
19%
Nanowire
16%
Annealing
14%
Transition Metal Dichalcogenide
11%
Nitride Compound
11%
Single Electron Devices
11%
Germanium
11%
Gallium
11%
Indium
11%
Zinc Oxide
11%
Capacitor
11%
Silicide
8%
Density
7%
Monolayers
7%
Aluminum Oxide
5%
Aluminum Nitride
5%
Aluminum Oxynitride
5%
Epitaxy
5%
Hafnium
5%
Carbon Dioxide
5%
Al2O3
5%
Electronic Circuit
5%
Doping (Additives)
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
5%
Thermal Conductivity
5%
Engineering
Field Effect Transistor
44%
Engineering
33%
Nodes
27%
Quantum Dot
24%
Interfacial Layer
23%
Gate Stack
22%
Energy Engineering
22%
Room Temperature
16%
Inverter
16%
Tunnel Construction
16%
Side Wall
13%
Phonon Interaction
11%
Effective Stress Method
11%
Field-Effect Transistor
11%
Qubit
11%
Electron Devices
11%
Dielectric Layer
11%
Low-Temperature
11%
Single Electron
11%
Strain Effect
11%
Nanowire
11%
Internet-Of-Things
11%
Bias Voltage
10%
Operating Voltage
8%
Subthreshold Slope
8%
Implant
7%
Rapid Thermal Annealing
6%
Experimental Observation
6%
Atomistic Simulation
5%
Linear Unit
5%
Aluminum Oxide
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
5%
Thermal Conductivity
5%
Optimization Strategy
5%
Metal Layer
5%
Far-Infrared Laser
5%
Monoclinic
5%
Dielectrics
5%
Crystallinity
5%
Interdiffusion
5%
Area Overhead
5%
Gate Length
5%
Data Retention
5%
Electric Field
5%
Barrier Layer
5%
Nanosheet
5%
Design Guideline
5%
Reliability Issue
5%
Low Power Consumption
5%
