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查看斯高帕斯 (Scopus) 概要
唐 英瓚
助理教授
資訊電機學院
電子郵件
yttang
ee.ncu.edu
tw
網站
https://scholars.ncu.edu.tw/zh/persons/ying-tsang-tang
h-index
301
引文
12
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2009
2024
每年研究成果
概覽
指紋
網路
研究計畫
(2)
研究成果
(30)
資料集
(2)
類似的個人檔案
(1)
指紋
查看啟用 Ying-Tsang Tang 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
HfZrOx
38%
Interfacial Layer
32%
HfO2
26%
Ferroelectric Field-effect Transistor (FeFET)
25%
Ioff
24%
Memory Window
23%
Fin Field-effect Transistor (FinFET)
23%
Carbon Nanotube Field Effect Transistor (CNTFET)
23%
Sub-60 mV/dec
23%
Molybdenite
20%
Subthreshold Swing
19%
Transistor
19%
Zirconium Dioxide
18%
Wake-up
18%
In-memory
17%
Bias Dependence
17%
Phonons
17%
Highly Reliable
17%
Angstrom
17%
Gate Engineering
17%
Negative Capacitance
17%
Orthorhombic
17%
Ferroelectric Capacitor
17%
Orthorhombic Phase
16%
Gate Stack
15%
Metal Gate
15%
Ferroelectric Polarization
15%
Conductance
14%
Tunneling Rate
14%
Electron-phonon Interaction
14%
Energy Efficient
14%
Quantum Dots
14%
Low Temperature
14%
Storage Capacity
14%
Phase Transition
14%
First-principles Calculations
14%
Double Quantum Dot
13%
Technology Node
13%
Ferroelectric HZO
13%
Ferroelectric Memory
13%
HfZrO2
12%
Ferroelectric Layer
11%
Single-molecule Transistor
11%
Hybrid Implants
11%
Fin Type
11%
Plasma Immersion
11%
Doping Technique
11%
Dielectric Layer
11%
Bias Effect
11%
Germanium Quantum Dots
11%
Engineering
Field Effect Transistor
47%
Engineering
35%
Nodes
29%
Quantum Dot
26%
Interfacial Layer
24%
Gate Stack
23%
Room Temperature
17%
Inverter
17%
Tunnel Construction
17%
Side Wall
14%
Phonon Interaction
11%
Effective Stress Method
11%
Field-Effect Transistor
11%
Qubit
11%
Electron Devices
11%
Dielectric Layer
11%
Low-Temperature
11%
Single Electron
11%
Strain Effect
11%
Nanowire
11%
Internet-Of-Things
11%
Plasma Treatment
11%
Storage Capacity
11%
Bias Voltage
11%
Superlattice
9%
Operating Voltage
8%
Subthreshold Slope
8%
Implant
7%
Rapid Thermal Annealing
7%
Experimental Observation
7%
Monoclinic
7%
Data Retention
7%
Atomistic Simulation
5%
Aluminum Oxide
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
5%
Thermal Conductivity
5%
Optimization Strategy
5%
Metal Layer
5%
Far-Infrared Laser
5%
Dielectrics
5%
Crystallinity
5%
Interdiffusion
5%
Area Overhead
5%
Gate Length
5%
Electric Field
5%
Barrier Layer
5%
Nanosheet
5%
Design Guideline
5%
Reliability Issue
5%
Low Power Consumption
5%
Material Science
Ferroelectric Material
100%
Field Effect Transistor
78%
Transistor
50%
Quantum Dot
47%
Capacitance
38%
Zirconia
23%
Dielectric Material
19%
Nanowire
17%
Annealing
15%
Transition Metal Dichalcogenide
11%
Single Electron Devices
11%
Germanium
11%
Gallium
11%
Indium
11%
Zinc Oxide
11%
Aluminum Oxide
11%
Capacitor
11%
Silicide
8%
Density
8%
Monolayers
8%
Aluminum Nitride
5%
Aluminum Oxynitride
5%
Epitaxy
5%
Hafnium
5%
Carbon Dioxide
5%
Electronic Circuit
5%
Doping (Additives)
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
5%
Thermal Conductivity
5%
Nitride Compound
5%
Photoemission Spectroscopy
5%
