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查看斯高帕斯 (Scopus) 概要
李 天錫
教授
機械工程學系
https://orcid.org/0000-0002-2493-7602
電子郵件
benlee
ncu.edu
tw
網站
https://www.me.ncu.edu.tw/Faculty/faculty-more.php?id=40
h-index
991
引文
14
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1996 …
2024
每年研究成果
概覽
指紋
網路
研究計畫
(13)
研究成果
(52)
類似的個人檔案
(5)
指紋
查看啟用 Tien-Hsi Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Layer Transfer
65%
Wafer Bonding
51%
Wafer
40%
Silicon Wafer
35%
Low Temperature
35%
Silicon Layer
33%
Annealing
29%
Layer Splitting
27%
Porous Silicon
24%
Ion-cutting
24%
Silicon Surface
23%
High Temperature
23%
Si Layer
21%
Polysilicon
21%
Bond Energy
20%
Bonding Interface
20%
Sacrificial Layer
19%
Porous Layer
19%
Oxides
18%
Blister
17%
Nanocrystals
16%
P-type
16%
Silica
15%
Hydrofluoric Acid
15%
Hydrogen Ion
15%
Smart-cut
14%
Laser Irradiation
14%
Bonding Strength
14%
Anodic Bonding
13%
Free Carrier Absorption
13%
FDSOI
13%
Device Wafer
13%
Photoluminescent
12%
Thickness Measurement
12%
Photoconduction
12%
Resistivity
12%
Metallic Interconnect
12%
Oxidation Behavior
12%
Plasma Sputtering
12%
High-resistivity Silicon (HR-Si)
12%
Surface Blistering
12%
Implanted Silicon
12%
Nitrogen Plasma
12%
Si Wafer
11%
Silicon-on-insulator
11%
Laser Power
10%
Insulator
10%
Self-powered
10%
Surface Activation
9%
Silicon Nitride
9%
Engineering
Wafer Bonding
65%
Low-Temperature
55%
Silicon Layer
39%
Nanoscale
38%
Silicon Wafer
37%
Porous Silicon
25%
Silicon Surface
23%
Polysilicon
21%
Laser Irradiation
20%
Bonding Strength
20%
Porous Layer
19%
Si Wafer
16%
Silicon Dioxide
16%
Anodization
15%
Device Wafer
15%
Silicon Oxide
13%
Piezoelectric
13%
Thin Films
13%
Displacement Sensor
12%
Capacitive
12%
Surface Activation
11%
Laser Power
10%
Self-Powered
10%
Implant
10%
Plasma Activation
10%
Nanomaterial
10%
Ion Implantation
9%
Crystalline Silicon
9%
Thermal Stress
9%
Silicon on Insulator
9%
Carrier Absorption
9%
Hydrophobic
8%
Irradiated Surface
8%
Transfer Process
8%
Plasma Treatment
8%
Root Mean Square
7%
Implanted Device
7%
Fabrication Method
7%
Electrochemical Etching
7%
Chemical Mechanical Polishing
7%
Material Technology
7%
Energy Harvesting
7%
Bonding Pair
7%
Heat Treatment
7%
Room Temperature
7%
Bonding Process
6%
Microelectromechanical System
6%
Nanometre
6%
Interdiffusion
6%
Bulk Layer
6%
Material Science
Silicon
100%
Surface (Surface Science)
82%
Oxide Compound
26%
Silicon Wafer
26%
Porous Silicon
26%
Anodizing
20%
Thin Films
14%
Electrical Resistivity
13%
Annealing
13%
Ion Implantation
9%
Photoluminescence
9%
Activation Energy
9%
Film
9%
Poly Methyl Methacrylate
9%
Microelectromechanical System
8%
Transfer Process
8%
Electrochemical Etching
8%
Electronic Circuit
7%
Transmission Electron Microscopy
7%
Aluminum Nitride
6%
Rough Surface
6%
Silicon on Insulator Material
6%
Capacitance
6%
Boron
6%
Composite Films
6%
Diamond
6%
Epitaxy
6%
Oxide Surface
6%
Nickel Alloy
6%
Nanostructure
5%
