跳至主導覽
跳至搜尋
跳過主要內容
國立中央大學 首頁
說明與常見問題
English
中文
首頁
人才檔案
研究單位
研究計畫
研究成果
資料集
榮譽/獲獎
學術活動
新聞/媒體
影響
按專業知識、姓名或所屬機構搜尋
查看斯高帕斯 (Scopus) 概要
李 勝偉
教授, 材料科學與工程研究所 所長
材料科學與工程研究所
電子郵件
swlee
ncu.edu
tw
網站
http://in.ncu.edu.tw/mse/teacher01.php
h-index
2298
引文
26
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2002
2024
每年研究成果
概覽
指紋
網路
研究計畫
(16)
研究成果
(180)
資料集
(1)
類似的個人檔案
(6)
指紋
查看啟用 Sheng-Wei Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Quantum Dot
73%
Oxide Compound
73%
Density
63%
Surface (Surface Science)
53%
Thin Films
40%
Film
39%
Chemical Vapor Deposition
33%
Silicide
30%
Phase Composition
29%
Anode
28%
Silicon
25%
Annealing
24%
Nanostructure
23%
Nanorod
23%
Photoluminescence
23%
Buffer Layer
22%
Lithography
21%
Nanowire
20%
Electrical Resistivity
20%
Cathode
20%
Nanosphere
18%
Nanodots
18%
Graphene
17%
Scanning Electron Microscopy
16%
Sintering
16%
Thermal Conductivity
16%
Oxidation Reaction
16%
Sol-Gel
15%
Heterojunction
15%
Thermal Stability
14%
Metal-Oxide-Semiconductor Field-Effect Transistor
14%
Carbon Dioxide
14%
Epilayers
14%
Titanium Dioxide
13%
Optical Property
12%
Superlattice
12%
Electrical Conductivity
11%
Thermoelectrics
11%
Ionic Liquid
11%
Wet Etching
10%
Crystal Structure
10%
Nanoparticle
9%
X-Ray Diffraction
9%
Epitaxial Film
9%
Ruthenium
8%
Biocompatibility
8%
Electroluminescence
8%
Nanotube
8%
Titanium
8%
Capacitance
8%
Keyphrases
SiGe
100%
Germanium Quantum Dots
44%
Si(111)
37%
Electrolyte
31%
Oxides
31%
Epitaxial
26%
High Vacuum Chemical Vapor Deposition
24%
Strained Si
20%
NiSi
20%
Proton Conductivity
19%
Annealing
18%
Low Resistivity
17%
Rutile
17%
Nanosphere Lithography
17%
Si Layer
16%
Cell Performance
16%
Quantum Dots
16%
Nanoring
15%
SiGe Film
15%
Composite Quantum Dots
14%
Enhanced Growth
14%
Nanostructures
14%
Si Substrate
14%
Solid Oxide Fuel Cell
13%
Chemical Etching
12%
Oxygen Reduction Reaction
12%
Exchange Method
12%
Citrate
12%
Thermal Stability
11%
Epitaxial Si
11%
Ionic Liquid Electrolyte
11%
Si0.7Ge0.3
11%
Ge Dot
11%
Proton-conducting Solid Oxide Fuel Cells
11%
Amorphous Si
11%
Ge Islands
10%
Virtual Substrate
10%
Si1-yCy
10%
Room Temperature
10%
Silicide
10%
Electrical Properties
10%
Periodic Array
10%
Si Interlayer
10%
Buffer Layer
10%
Nanorod Arrays
10%
Ni Silicide
10%
Superlattice
10%
Nanodots
10%
Microstructure
10%
Optical Properties
9%
Engineering
Quantum Dot
48%
Vapor Deposition
23%
Chemical Vapor Deposition
23%
Solid Oxide Fuel Cell
22%
Thin Films
21%
Room Temperature
14%
Phase Composition
14%
Cell Performance
12%
Metal-Oxide-Semiconductor Field-Effect Transistor
11%
Nanotube
11%
Nanomaterial
10%
Ray Diffraction
9%
Fuel Cell
9%
Graphene
8%
Thermal Conductivity
8%
Superlattice
8%
Luminaires
8%
Heat Treatment
8%
Intermediate Temperature
7%
Sol-Gel Process
7%
Experimental Result
7%
Conductive
7%
Figure of Merit
7%
Nanodots
7%
Nanofiber
7%
Rate Capability
6%
State Reaction
6%
Silicon Dioxide
6%
Si Device
6%
Oxygen Reduction Reaction
6%
Porosity
6%
Annealing Temperature
5%
Deposition System
5%
Engineering
5%
Carbon Incorporation
5%
Complementary Metal-Oxide-Semiconductor
5%
Low-Temperature
5%
Residual Strain
5%
Biomimetics
5%
Young's Modulus
5%
Two Dimensional
5%
Ethylene Carbonate
5%
Seebeck Effect
5%
Nanowire
5%
Buffer Layer
5%
Nanoscale
5%
Sheet Resistance
5%
Heterojunctions
5%
Interlayer
5%
Electrochemical Capacitor
5%
