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查看斯高帕斯 (Scopus) 概要
鄭 紹良
教授
化學工程與材料工程學系
電子郵件
slcheng
ncu.edu
tw
網站
http://www.cme.ncu.edu.tw/products_detail/28.htm
h-index
1832
引文
20
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1996 …
2024
每年研究成果
概覽
指紋
網路
研究計畫
(8)
研究成果
(148)
資料集
(1)
類似的個人檔案
(6)
指紋
查看啟用 Shao-Liang Cheng 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Silicide
100%
Nanowire
73%
Film
68%
Silicon
58%
Thin Films
56%
Density
51%
Electrical Resistivity
47%
Annealing
38%
Nanodots
34%
Nanosphere
30%
Lithography
30%
Surface (Surface Science)
30%
Thermal Stability
20%
Ultimate Tensile Strength
20%
Oxide Compound
16%
Nucleation
16%
Titanium
16%
Nanostructure
14%
Cobalt
14%
Transmission Electron Microscopy
13%
High-Resolution Transmission Electron Microscopy
13%
Amorphous Silicon
12%
Wet Etching
12%
Ion Implantation
11%
Nanocrystallites
11%
Heat Treatment
9%
Grain Size
9%
Nanorod
9%
Epitaxy
9%
ZnO
9%
Morphology
9%
Nanocrystalline
9%
Nanocontact
8%
Superconducting Material
8%
Polystyrene
7%
Scanning Electron Microscopy
7%
Heterojunction
7%
Electron Paramagnetic Resonance Spectroscopy
7%
Crystallite
6%
Nanoparticle
6%
Grain Boundary
6%
Activation Energy
6%
Photoluminescence
6%
Carrier Concentration
6%
Quantum Dot
6%
Electrodeposition
6%
Cobalt-Nickel Alloys
6%
Cathode
5%
Wettability
5%
Contact Angle
5%
Keyphrases
Si Substrate
59%
Annealing
47%
Epitaxial
46%
TiSi2
44%
NiSi2
33%
Silicide
31%
Nanosphere Lithography
29%
Low Resistivity
28%
Periodic Array
28%
CoSi2
27%
Si(111)
25%
NiSi
25%
Nanodots
23%
Silicon Nanowires (SiNWs)
23%
High Current Density
22%
Ni Silicide
22%
Interfacial Reaction
21%
Nickel Silicide
21%
Nanodot Array
20%
Single-crystalline
19%
Silicon Substrate
19%
Amorphous Si
19%
Nanowires
19%
Annealing Temperature
18%
Ion Implantation
16%
SiGe
16%
Vertically Aligned
16%
Autocorrelation Function Analysis
15%
Stress Effect
14%
High-resolution Transmission Electron Microscopy (HRTEM)
14%
YBa2Cu3O7
13%
Enhanced Growth
13%
Growth Kinetics
13%
High Density
12%
Tensile Stress
12%
Thermal Stability
12%
Shallow Junction
12%
Si Nanowire Arrays
11%
Si Channel
10%
Phase Formation
10%
Si0.7Ge0.3
10%
Epitaxial Si
10%
Si Interlayer
10%
N-Si
9%
Nitrogen Ions
9%
Titanium Silicide
9%
Silicide Formation
8%
Nanocontact
8%
Room Temperature
8%
Nitrogen Ion Implantation
8%
Engineering
Thin Films
38%
Si Substrate
28%
Nanowire
19%
Tensile Stress σ
18%
Silicon Substrate
17%
High Current Density
16%
Compressive Stress
13%
Shallow Junction
13%
Interlayer
10%
Polycrystalline
10%
Implanted Sample
10%
Electromigration
9%
Si Interface
9%
Low-Temperature
9%
Field Emission
8%
Si Nanowires
8%
Stress Level
7%
Growth Kinetics
7%
Heterostructures
6%
Nanoparticle
6%
Nanodots
6%
Experimental Result
6%
Two Dimensional
6%
Interdiffusion
6%
Sheet Resistance
6%
Ion Implantation
5%
Initial Stage
5%
Anodes and Cathode
5%
Diffusivity
5%
Biomimetics
5%
Alloy Layer
5%
Kinetic Study
5%
Atomic Force Microscopy
5%
Nanomaterial
5%
Annealing Temperature
5%
Growth Behavior
5%
