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查看斯高帕斯 (Scopus) 概要
綦 振瀛
教授, 副校長, , 前瞻科技研究中心 中心主任
前瞻科技研究中心
電機工程學系
光電科學研究中心
電子郵件
chyi
ee.ncu.edu
tw
網站
https://www.ncu.edu.tw/tw/pages/show.php?top=1&num=26
h-index
8936
引文
47
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1983 …
2026
每年研究成果
概覽
指紋
網路
研究計畫
(39)
研究成果
(587)
資料集
(2)
類似的個人檔案
(6)
指紋
查看啟用 Jen-Inn Chyi 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Gallium Arsenide
100%
Quantum Dot
84%
Heterojunction
77%
Density
64%
Transistor
61%
Electron Mobility
61%
Molecular Beam Epitaxy
59%
Indium Gallium Arsenide
54%
Quantum Well
43%
Photoluminescence
42%
Light-Emitting Diode
37%
Aluminum Nitride
30%
Field Effect Transistor
29%
Film
28%
Optical Property
26%
Epilayers
25%
Photosensor
24%
Photonic Crystal
24%
Bipolar Transistor
24%
Sapphire
22%
Schottky Diode
21%
Buffer Layer
19%
Schottky Barrier
19%
Oxide Compound
18%
Metal-Organic Chemical Vapor Deposition
18%
Indium
16%
Surface (Surface Science)
15%
GaAs/AlGaAs
15%
Nitride Compound
15%
Silicon
14%
Dielectric Material
14%
Electrical Resistivity
14%
Epitaxy
13%
Transmission Electron Microscopy
13%
Annealing
13%
Capacitance
13%
Thermal Stability
12%
Antenna
11%
Metal-Oxide-Semiconductor Field-Effect Transistor
11%
Electronic Circuit
10%
Carrier Concentration
10%
Epitaxial Film
10%
Current Voltage Characteristics
10%
Nanocavity
10%
Aluminium Gallium Arsenide
9%
Chemical Vapor Deposition
9%
ZnO
9%
Superlattice
9%
Metal Oxide
8%
Electrical Property
8%
Keyphrases
Gallium Arsenide
89%
Indium Gallium Nitride (InGaN)
77%
Quantum Dots
53%
InGaAs
48%
Molecular Beam Epitaxy
47%
InGaN Quantum Wells
37%
InAs Quantum Dots
36%
Optical Properties
35%
Metal-organic Chemical Vapor Deposition (MOCVD)
34%
Multiple Quantum Wells
32%
GaN HEMT
32%
Light-emitting Diodes
31%
Quantum Dot Lasers
31%
AlGaN-GaN
31%
Optical Transmitters
27%
InAlAs
27%
GaAs Substrate
25%
InGaSb
24%
Photonic Crystal Nanocavity
22%
GaAs Quantum Dot
22%
Epilayer
22%
Room Temperature
22%
Photoluminescence
21%
AlSb
21%
Quantum Well
21%
Low Temperature
21%
AlGaAs
20%
Heterojunction Bipolar Transistors
20%
Double Heterojunction Bipolar Transistor
19%
Aluminum Gallium Nitride (AlGaN)
19%
InGaAs Quantum Dots
19%
Recombination
18%
Electrical Properties
18%
GaAsSb
18%
Multiple Quantum Well Structure
17%
High Electron Mobility Transistor
17%
Acoustic Waves
17%
Capping Layer
16%
Si Substrate
16%
Sub-terahertz (sub-THz)
16%
Indium Content
15%
Heterostructure
15%
Fmax
14%
GaN-based
14%
Gate Length
14%
P-GaN
14%
Metal-semiconductor-metal Photodetector
14%
Device Performance
13%
Self-assembled Quantum Dots
13%
Buffer Layer
13%
Engineering
Gallium Arsenide
72%
Quantum Dot
67%
Quantum Well
53%
Indium Gallium Arsenide
53%
Heterojunctions
46%
Photonics
30%
Light-Emitting Diode
29%
Transistor
25%
Breakdown Voltage
25%
Low-Temperature
24%
Current Gain
23%
Aluminium Gallium Arsenide
21%
Field-Effect Transistor
20%
Photodiode
20%
Bipolar Transistor
19%
Cap Layer
18%
Gate Length
17%
Heterojunction bipolar transistors
17%
Current Drain
15%
Cutoff Frequency
15%
Heterostructures
15%
Room Temperature
15%
Device Performance
14%
Metal Organic Chemical Vapor Deposition
14%
Photometer
14%
Band Gap
14%
Si Substrate
12%
Gaas Substrate
12%
Buffer Layer
11%
Terahertz
10%
Piezoelectric
10%
Ohmic Contacts
10%
Indium Content
9%
Electric Field
9%
Chemical Vapor Deposition
9%
Superlattice
8%
Vapor Deposition
8%
Photodetector
8%
Passivation
8%
Figure of Merit
8%
Dislocation Density
8%
Metal-Oxide-Semiconductor Field-Effect Transistor
8%
Output Power
8%
Localized State
8%
Nitride
7%
Heterostructure field effect transistors
7%
Metal Oxide Semiconductor
7%
Sheet Resistance
7%
Frequency Noise
6%
Thin Films
6%
