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查看斯高帕斯 (Scopus) 概要
綦 振瀛
教授, 副校長,
前瞻科技研究中心
電機工程學系
光電科學研究中心
電子郵件
chyi
ee.ncu.edu
tw
網站
https://www.ncu.edu.tw/tw/pages/show.php?top=1&num=26
h-index
8475
引文
45
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1983 …
2025
每年研究成果
概覽
指紋
網路
研究計畫
(34)
研究成果
(582)
資料集
(2)
類似的個人檔案
(6)
指紋
查看啟用 Jen-Inn Chyi 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Indium Gallium Nitride (InGaN)
100%
Gallium Arsenide
86%
Quantum Dots
54%
InGaAs
50%
GaN HEMT
48%
Molecular Beam Epitaxy
47%
Multiple Quantum Wells
45%
AlGaN-GaN
43%
InAs Quantum Dots
37%
Optical Properties
35%
Light-emitting Diodes
33%
Metal-organic Chemical Vapor Deposition (MOCVD)
33%
High Electron Mobility Transistor
30%
Quantum Dot Lasers
29%
Low Temperature
28%
Optical Transmitters
27%
GaAs Substrate
25%
InAlAs
24%
Temperature Effect
24%
InGaN Quantum Wells
24%
Photoluminescence
23%
InGaSb
23%
Photonic Crystal Nanocavity
22%
Room Temperature
22%
GaAs Quantum Dot
21%
Epilayer
21%
InGaAs Quantum Dots
20%
AlSb
20%
GaN Heterostructure
19%
Heterojunction Bipolar Transistors
19%
Quantum Well
19%
Electrical Properties
19%
GaAsSb
19%
Quantum Well Structure
19%
AlGaAs
19%
Capping Layer
18%
Recombination
18%
Double Heterojunction Bipolar Transistor
17%
Rectifier
17%
Aluminum Gallium Nitride (AlGaN)
17%
P-GaN
17%
Si Substrate
16%
Heterostructure
16%
Self-assembled Quantum Dots
16%
Multiple Quantum Well Structure
16%
Acoustic Waves
15%
Heterostructure Field-effect Transistors
15%
Indium Content
14%
Metal-semiconductor-metal Photodetector
14%
GaN-based
14%
Material Science
Gallium Arsenide
92%
Quantum Dot
64%
Heterojunction
63%
Transistor
54%
Electron Mobility
53%
Density
51%
Molecular Beam Epitaxy
50%
Indium Gallium Arsenide
43%
Quantum Well
37%
Photoluminescence
34%
Light-Emitting Diode
31%
Surface (Surface Science)
29%
Aluminum Nitride
27%
Film
25%
Field Effect Transistor
23%
Optical Property
22%
Bipolar Transistor
22%
Epilayers
21%
Indium
20%
Photonic Crystal
20%
Sapphire
19%
Aluminium Gallium Arsenide
17%
Buffer Layer
17%
Schottky Diode
16%
Phase Composition
16%
Schottky Barrier
16%
Metal-Organic Chemical Vapor Deposition
15%
Oxide Compound
14%
Silicon
14%
Capacitance
13%
Electrical Resistivity
13%
Transmission Electron Microscopy
11%
Nitride Compound
11%
Epitaxy
10%
Dielectric Material
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Thermal Stability
10%
Annealing
10%
Current Voltage Characteristics
9%
Carrier Concentration
9%
Luminescence
9%
Epitaxial Film
8%
Electronic Circuit
8%
Oxidation Reaction
8%
ZnO
8%
Piezoelectricity
7%
Metal Oxide
7%
Oxide Semiconductor
6%
Gallium Nitride
6%
Al2O3
6%
Engineering
Gallium Arsenide
81%
Quantum Dot
78%
Quantum Well
71%
Heterojunctions
68%
Indium Gallium Arsenide
60%
Light-Emitting Diode
44%
Bipolar Transistor
32%
Photonics
31%
Low-Temperature
30%
Field-Effect Transistor
29%
Breakdown Voltage
26%
Aluminium Gallium Arsenide
22%
Current Gain
21%
Heterostructures
21%
Photometer
19%
Photodiode
19%
Room Temperature
19%
Cap Layer
18%
Buffer Layer
18%
Phase Composition
17%
Band Gap
16%
Gate Length
16%
Metal Organic Chemical Vapor Deposition
15%
Terahertz
15%
Device Performance
15%
Cutoff Frequency
15%
Gaas Substrate
15%
Current Drain
15%
Piezoelectric
14%
Si Substrate
13%
Photodetector
12%
Nitride
12%
Ohmic Contacts
12%
Superlattice
11%
Energy Engineering
11%
Indium Content
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Luminaires
10%
Chemical Vapor Deposition
10%
Passivation
9%
Vapor Deposition
9%
Localized State
9%
Electric Field
9%
Temperature Dependence
9%
Thin Films
9%
Dislocation Density
8%
Output Power
8%
Figure of Merit
8%
Fermi Level
8%
Sheet Resistance
8%
