跳至主導覽
跳至搜尋
跳過主要內容
國立中央大學 首頁
說明與常見問題
English
中文
首頁
人才檔案
研究單位
研究計畫
研究成果
資料集
榮譽/獲獎
學術活動
新聞/媒體
影響
按專業知識、姓名或所屬機構搜尋
查看斯高帕斯 (Scopus) 概要
綦 振瀛
教授, 副校長, , 前瞻科技研究中心 中心主任
前瞻科技研究中心
電機工程學系
光電科學研究中心
電子郵件
chyi
ee.ncu.edu
tw
網站
https://www.ncu.edu.tw/tw/pages/show.php?top=1&num=26
h-index
8605
引文
46
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1983 …
2025
每年研究成果
概覽
指紋
網路
研究計畫
(39)
研究成果
(584)
資料集
(2)
類似的個人檔案
(6)
指紋
查看啟用 Jen-Inn Chyi 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Indium Gallium Nitride (InGaN)
100%
Gallium Arsenide
86%
Quantum Dots
55%
InGaAs
51%
GaN HEMT
48%
Molecular Beam Epitaxy
47%
Multiple Quantum Wells
45%
AlGaN-GaN
43%
InAs Quantum Dots
37%
Optical Properties
35%
Light-emitting Diodes
33%
Metal-organic Chemical Vapor Deposition (MOCVD)
33%
High Electron Mobility Transistor
30%
Quantum Dot Lasers
29%
Low Temperature
28%
Optical Transmitters
27%
GaAs Substrate
25%
InAlAs
25%
Temperature Effect
24%
InGaN Quantum Wells
24%
Photoluminescence
24%
InGaSb
23%
Photonic Crystal Nanocavity
22%
Room Temperature
22%
GaAs Quantum Dot
21%
Epilayer
21%
InGaAs Quantum Dots
20%
AlSb
20%
GaAsSb
20%
GaN Heterostructure
19%
Heterojunction Bipolar Transistors
19%
Quantum Well
19%
Electrical Properties
19%
Quantum Well Structure
19%
AlGaAs
19%
Capping Layer
18%
Recombination
18%
Double Heterojunction Bipolar Transistor
18%
Rectifier
18%
Aluminum Gallium Nitride (AlGaN)
17%
P-GaN
17%
Si Substrate
16%
Heterostructure
16%
Self-assembled Quantum Dots
16%
Multiple Quantum Well Structure
16%
Acoustic Waves
15%
Heterostructure Field-effect Transistors
15%
Indium Content
14%
Metal-semiconductor-metal Photodetector
14%
GaN-based
14%
Material Science
Gallium Arsenide
81%
Quantum Dot
64%
Heterojunction
63%
Transistor
55%
Electron Mobility
54%
Density
50%
Molecular Beam Epitaxy
50%
Indium Gallium Arsenide
44%
Quantum Well
37%
Photoluminescence
35%
Light-Emitting Diode
35%
Surface (Surface Science)
29%
Aluminum Nitride
27%
Film
24%
Optical Property
22%
Bipolar Transistor
22%
Epilayers
22%
Field Effect Transistor
21%
Photosensor
20%
Indium
20%
Photonic Crystal
20%
Sapphire
20%
Buffer Layer
17%
Schottky Diode
17%
Oxide Compound
15%
Schottky Barrier
15%
Metal-Organic Chemical Vapor Deposition
15%
Silicon
14%
Antenna
14%
GaAs/AlGaAs
12%
Electrical Resistivity
12%
Nitride Compound
12%
Capacitance
11%
Epitaxy
11%
Transmission Electron Microscopy
11%
Dielectric Material
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Thermal Stability
10%
Annealing
10%
Current Voltage Characteristics
9%
Carrier Concentration
9%
Luminescence
9%
Electronic Circuit
9%
Epitaxial Film
8%
ZnO
7%
Piezoelectricity
7%
Aluminium Gallium Arsenide
7%
Metal Oxide
7%
Oxide Semiconductor
6%
Gallium Nitride
6%
Engineering
Gallium Arsenide
82%
Quantum Dot
78%
Quantum Well
71%
Heterojunctions
69%
Indium Gallium Arsenide
61%
Light-Emitting Diode
44%
Bipolar Transistor
32%
Photonics
32%
Low-Temperature
30%
Field-Effect Transistor
29%
Breakdown Voltage
26%
Aluminium Gallium Arsenide
22%
Current Gain
21%
Heterostructures
21%
Photometer
19%
Photodiode
19%
Room Temperature
19%
Cap Layer
18%
Buffer Layer
18%
Band Gap
17%
Gate Length
16%
Metal Organic Chemical Vapor Deposition
16%
Terahertz
15%
Device Performance
15%
Cutoff Frequency
15%
Gaas Substrate
15%
Current Drain
15%
Piezoelectric
14%
Si Substrate
13%
Photodetector
12%
Nitride
12%
Ohmic Contacts
12%
Superlattice
11%
Indium Content
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Luminaires
10%
Chemical Vapor Deposition
10%
Passivation
9%
Vapor Deposition
9%
Localized State
9%
Electric Field
9%
Temperature Dependence
9%
Dislocation Density
9%
Output Power
8%
Figure of Merit
8%
Fermi Level
8%
Thin Films
8%
Sheet Resistance
8%
Epitaxial Film
7%
Responsivity
7%
