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查看斯高帕斯 (Scopus) 概要
陳 一塵
副教授
材料科學與工程研究所
電子郵件
ichen
ncu.edu
tw
網站
https://in.ncu.edu.tw/mse/teacher08.php
h-index
483
引文
11
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2005
2022
每年研究成果
概覽
指紋
網路
研究計畫
(9)
研究成果
(51)
類似的個人檔案
(6)
指紋
查看啟用 I-Chen Chen 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Electron Cyclotron Resonance Chemical Vapor Deposition
72%
A-Si
57%
Silane
33%
Hydrogenated Amorphous Silicon
23%
Low Temperature
23%
Passivation Layer
22%
Hydrogen Dilution Ratio
19%
Plasma Diagnostics
19%
Optical Emission Spectroscopy
19%
Cantilever
17%
Annealing
17%
Plasma-enhanced Chemical Vapor Deposition (PECVD)
16%
Deposition Rate
13%
P-GaN
13%
Carbon Nanocones
13%
Film Properties
13%
Passivation Quality
13%
Thermal Annealing
12%
Growth Rate
12%
Ohmic Contact
12%
Microwave Energy
12%
Solar Cell
12%
Carbon Nanotubes
11%
P-type
11%
Chemical Vapor Deposition Processes
11%
Hydrogen Content
11%
Electron Cyclotron Resonance Plasma
11%
Silicon Thin Film
11%
Glass Substrate
10%
Electrical Properties
10%
Anodic Aluminum Oxide Membrane
10%
Electron Cyclotron Resonance
10%
Phosphorus Doping
9%
High Reflectance
9%
Cm(III)
9%
High Aspect Ratio
9%
Silicon Substrate
9%
AAO Membrane
9%
Constant Current Method
9%
Microcrystalline
9%
Heterojunction Interface
9%
Germanium
9%
Plasma Spectra
9%
Working Pressure
9%
Boron Doping
9%
GaN Thin Film
9%
Chemical Vapor Deposition Method
9%
C-Si
9%
Structural Properties
8%
Substrate Temperature
8%
Material Science
Film
100%
Chemical Vapor Deposition
85%
Thin Films
67%
Silicon
52%
Amorphous Silicon
36%
Solar Cell
32%
Annealing
32%
Dilution
27%
Carbon Nanotube
22%
Surface (Surface Science)
20%
Oxide Compound
20%
Emission Spectroscopy
19%
Heterojunction
19%
Density
18%
Plasma-Enhanced Chemical Vapor Deposition
14%
Germanium
13%
Electrical Resistivity
12%
Carrier Concentration
11%
Plasma Density
10%
Silicon Nitride
9%
Nanodots
9%
Boron
9%
Thermal Stability
9%
Vapor Phase Deposition
9%
X-Ray Diffraction
6%
Indium
6%
Electronic Circuit
6%
Nanocrystalline Silicon
6%
Quadrupole Mass Spectrometry
6%
Film Growth
6%
Carbon Dioxide
5%
Platinum
5%
Thin Film Deposition
5%
Silane
5%
Dielectric Material
5%
Engineering
Chemical Vapor Deposition
49%
Thin Films
45%
Vapor Deposition
45%
Cyclotron Resonance
41%
Solar Cell
24%
Light Emission
18%
Hydrogen Dilution
17%
Passivation Layer
17%
Heterojunctions
13%
Reflectance
13%
Low-Temperature
12%
Deposition Rate
12%
Ohmic Contacts
11%
Carbon Nanotube
11%
Flow Rate
11%
Flow Velocity
11%
Hydrogenated Amorphous Silicon
10%
Passivation
10%
Deposition Process
9%
Substrate Temperature
9%
High Resolution
9%
Vapor Deposition Method
9%
High Aspect Ratio
8%
Back Surface
7%
Surface Field
7%
Mass Spectrometer
7%
Atomic Force Microscopy
7%
Silicon Oxide
6%
Plasma Diagnostics
6%
Nanocrystalline
6%
Carrier Concentration
6%
Patterning Technique
5%
Low Growth Temperature
5%
Crystallinity
5%
Radio Frequency
5%
Electron Energy
5%
Electric Field
5%
