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查看斯高帕斯 (Scopus) 概要
邱 煥凱
教授
電機工程學系
電子郵件
hkchiou
ee.ncu.edu
tw
網站
http://www.ee.ncu.edu.tw/~hkchiou/
h-index
1321
引文
19
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1994 …
2024
每年研究成果
概覽
指紋
網路
研究計畫
(11)
研究成果
(148)
類似的個人檔案
(5)
指紋
查看啟用 Hwann-Kaeo Chiou 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering
Mixers (Machinery)
100%
Power Amplifier
95%
Low Noise Amplifier
88%
Balun
73%
Voltage-Controlled Oscillator
67%
V-Band
49%
Amplifier
47%
Phase Noise
47%
Electric Power Utilization
41%
Electric Lines
41%
Noise Figure
41%
Power Added Efficiency
36%
Monolithic Microwave Integrated Circuits
35%
Output Power
34%
K-Band
34%
Db Bandwidth
29%
Balanced Mixer
28%
Resistive
28%
Passive Device
27%
Chip Area
27%
Insertion Loss
26%
Oscillator
26%
Waveguide
26%
Power Gain
25%
Matching Network
20%
Low Power Consumption
20%
Supply Voltage
20%
Conversion Gain
19%
Figure of Merit
19%
Measured Result
19%
Ultra-Wideband
18%
X-Band
18%
Compact Size
18%
Harmonics
17%
Complementary Metal-Oxide-Semiconductor
17%
Return Loss
16%
Millimeter Wave
15%
Resonator
15%
Radio Frequency
15%
Db Compression Point
15%
Lowpass Filter
14%
Order Intercept Point
14%
Ka-Band
14%
Local Oscillator
13%
Bandpass Filter
13%
Signal Modulation
12%
Gallium Arsenide
12%
Error Vector
12%
Q Factor
12%
Conversion Loss
11%
Keyphrases
CMOS Technology
70%
Low Noise Amplifier
68%
Power Amplifier
60%
Mixer
57%
Voltage-controlled Oscillator
56%
Balun
54%
V-band
50%
Power Added Efficiency
42%
K-band
38%
Low Loss
35%
CMOS Process
35%
Low Power
34%
Power Consumption
34%
Noise Figure
32%
Transmission Line Transformer
31%
Power Gain
29%
Chip Area
27%
On chip
27%
Integrated Passive Device Technology
26%
Fully Integrated
26%
90-nm CMOS Technology
25%
Wideband
25%
Inductors
25%
Phase Noise
25%
3-dB Bandwidth
25%
High Linearity
24%
Supply Voltage
24%
High Efficiency
24%
Low Phase Noise
23%
Chip Size
23%
Power Output
22%
Dual Balun
21%
X-band
20%
Low Power Consumption
19%
Insertion Loss
19%
1-dB Compression Point
19%
CMOS Low Noise Amplifier
19%
Ultra-wideband
18%
Compact Size
18%
SiGe
18%
SiGe HBT
17%
Third-order Intercept Point
17%
Double-balanced Mixer
17%
Differential Low Noise Amplifier
16%
Conversion Loss
16%
Complementary Metal Oxide Semiconductor
16%
Return Loss
16%
Broadside Coupling
15%
Transistor
15%
Conversion Gain
15%
