謝 易叡

研究成果

每年研究成果 2008 2012 2015 2016 2017 2018 2019 2020 2021 2022 2023

• 60 會議論文篇章
• 18 期刊論文
• 1 篇章

每年研究成果

每年研究成果

搜尋結果

• 2023

  1-transistor 1-source/channel/drain-diode (1T1D) One-time-programmable Memory in 14-nm FinFET

  Hsieh, E. R., Luo, Y. M., Huang, Y. X., Su, H. S., Lin, R. Q., Lin, Y. H., Chang, K. H., Shen, T. H. & Liu, C. H., 2023, (已被接受) 於: IEEE Electron Device Letters. p. 1 1 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Impact Ionization 100%
  • Field effect transistors 60%
  • Diodes 52%
  • Transistors 48%
  • Data storage equipment 34%
• 2022

  Cryogenic Quasi-Ballistic Transport Enhanced by Strained Silicon Technologies in 14-nm Complementary Fin Field Effect Transistors Through Virtual Source Model

  Hsieh, E. R., Wang, Z. Y., Huang, Y. S., Hung, T. C., Lyu, R. Y. & Lee, K. Y., 1 7月 2022, 於: IEEE Transactions on Electron Devices. 69, 7, p. 3575-3580 6 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Strained silicon 100%
  • Ballistics 66%
  • Cryogenics 65%
  • Field effect transistors 64%
  • Field Effect 59%

• Emulator of Gene Mutation: Interfering True Random Number Generators using Resistive-gate Non-volatile-memories

  Hsieh, E. R., Huang, P. H., Miu, M. L., Huang, S. Y., Lu, S. M. & Lyu, R. Y., 2022, (已被接受) 於: IEEE Electron Device Letters. p. 1 1 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Genes 100%
  • Mutation 88%
  • Flow 67%
  • Hamming distance 66%
  • Data storage equipment 63%

• Positive-Bias-Temperature-Instability Induced Random-Trap-Fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs

  Hsieh, E. R., Wang, Z. Y., Ye, Y. H., Wu, Y. S., Huang, C. F., Huang, P. S., Huang, Y. S., Miu, M. L., Su, H. S., Huang, S. Y. & Lu, S. M., 1 9月 2022, 於: IEEE Electron Device Letters. 43, 9, p. 1396-1399 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Hardware security 100%
  • Entropy 64%
  • Gate dielectrics 37%
  • Hamming distance 32%
  • Temperature 31%
• 2021

  A FORMing-Free HfO₂-/HfON-Based Resistive-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory with 3-Bit-Per-Cell Storage Capability

  Hsieh, E. R., Chen, K. T., Chen, P. Y., Wong, S. S. & Chung, S. S., 6月 2021, 於: IEEE Transactions on Electron Devices. 68, 6, p. 2699-2704 6 p., 9419727.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Hafnium 100%
  • Hafnium Atom 75%
  • MOSFET devices 73%
  • Drain Current 73%
  • Dielectric Material 41%
  5 引文 斯高帕斯（Scopus）

• An embedded three-bit-per-cell two-transistors and one-ferroelectric-capacitance nonvolatile memory

  Hsieh, E. R., Wang, Z. Y., Huang, C. F. & Wu, Y. S., 10月 2021, 於: IEEE Electron Device Letters. 42, 10, p. 1460-1463 4 p.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Ferroelectric materials 100%
  • Conductance 72%
  • Capacitance 64%
  • Transistors 64%
  • Data storage equipment 46%
  3 引文 斯高帕斯（Scopus）

• A three-bit-per-cell via-type resistive random access memory gated metal-oxide semiconductor field-effect transistor non-volatile memory with the FORMing-free characteristic

  Ray Hsieh, E., Huang, Y. X., Ye, Y. H. & Wang, Z. Y., 12月 2021, 於: Semiconductor Science and Technology. 36, 12, 124002.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • MOSFET devices 100%
  • random access memory 99%
  • metal oxide semiconductors 87%
  • Field Effect 85%
  • Metal Oxide 71%
  2 引文 斯高帕斯（Scopus）

• Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array

  Hsieh, E. R., Zheng, X., Le, B. Q., Shih, Y. C., Radway, R. M., Nelson, M., Mitra, S. & Wong, S., 3月 2021, 於: IEEE Electron Device Letters. 42, 3, p. 335-338 4 p., 9336666.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Foundry 100%
  • RRAM 99%
  • Conductance 67%
  • Transistors 60%
  • Data storage equipment 43%
  10 引文 斯高帕斯（Scopus）

• Oxygen diffusion barrier on interfacial layer formed with remote NH₃ plasma treatment

  Ruan, D. B., Chang-Liao, K. S., Yeh, H. I., Chu, F. Y., Yang, K. C., Wu, P. C. & Hsieh, E. R., 15 10月 2021, 於: Surface and Coatings Technology. 423, 127588.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Diffusion barriers 100%
  • Diffusion Barrier 85%
  • Plasmas 62%
  • Oxidation 59%
  • Oxygen 54%
  1 引文 斯高帕斯（Scopus）

• RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays

  Le, B. Q., Levy, A., Wu, T. F., Radway, R. M., Ray Hsieh, E., Zheng, X., Nelson, M., Raina, P., Wong, H. S. P., Wong, S. & Mitra, S., 9月 2021, 於: IEEE Transactions on Electron Devices. 68, 9, p. 4397-4403 7 p., 9497347.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • RRAM 100%
  • Resistance 44%
  • Tuning 15%
  • Error 13%
  • Bit error rate 9%
  6 引文 斯高帕斯（Scopus）
• 2018

  An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFET

  Hsieh, E. R., Jiang, M. R., Lin, J. L., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 23 7月 2018, 於: IEEE Journal of the Electron Devices Society. 6, p. 866-874 9 p., 8418834.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  開啟存取

  • FinFET 100%
  • Thermal Resistance 95%
  • Heating 84%
  • Velocity 65%
  • Temperature 56%
  6 引文 斯高帕斯（Scopus）
• 2017

  A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash with Excellent Immunity to Sneak Path

  Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Chen, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 12月 2017, 於: IEEE Transactions on Electron Devices. 64, 12, p. 4910-4918 9 p., 8089812.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • RRAM 100%
  • FinFET 91%
  • Leakage Current 46%
  • Reduction 32%
  • Data storage equipment 27%
  8 引文 斯高帕斯（Scopus）
• 2016

  A theoretical and experimental evaluation of surface roughness variation in trigate metal oxide semiconductor field effect transistors

  Hsieh, E. R. & Chung, S. S., 28 5月 2016, 於: Journal of Applied Physics. 119, 20, 204502.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • metal oxide semiconductors 100%
  • surface roughness 82%
  • field effect transistors 76%
  • evaluation 61%
  • fins 33%
  2 引文 斯高帕斯（Scopus）
• 2015

  The understanding on the evolution of stress-induced gate leakage in high-k dielectric metal-oxide-field-effect transistor by random-telegraph-noise measurement

  Hsieh, E. R. & Chung, S. S., 14 12月 2015, 於: Applied Physics Letters. 107, 24, 243506.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • noise measurement 100%
  • metal oxides 89%
  • leakage 77%
  • field effect transistors 73%
  • traps 17%
  5 引文 斯高帕斯（Scopus）
• 2014

  The understanding of the drain-current fluctuation in a silicon-carbon source-drain strained n-channel metal-oxide-semiconductor field-effect transistors

  Hsieh, E. R. & Chung, S. S., 19 5月 2014, 於: Applied Physics Letters. 104, 20, 203503.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • metal oxide semiconductors 100%
  • field effect transistors 76%
  • carbon 65%
  • silicon 52%
  • conduction 16%
  3 引文 斯高帕斯（Scopus）
• 2012

  Suppressing device variability by cryogenic implant for 28-nm low-power SoC applications

  Yang, C. L., Tsai, C. H., Li, C. I., Tzeng, C. Y., Lin, G. P., Chen, W. J., Chin, Y. L., Liao, C. I., Chan, M., Wu, J. Y., Hsieh, E. R., Guo, B. N., Lu, S., Colombeau, B., Chung, S. S. & Chen, I. C., 2012, 於: IEEE Electron Device Letters. 33, 10, p. 1444-1446 3 p., 6289339.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • Boron 100%
  • Doping (additives) 98%
  • Cryogenics 96%
  • System-on-chip 89%
  • Implant 86%
  8 引文 斯高帕斯（Scopus）

• The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors

  Hsieh, E. R. & Chung, S. S., 26 11月 2012, 於: Applied Physics Letters. 101, 22, 223505.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • metal oxide semiconductors 100%
  • field effect transistors 76%
  • traps 72%
  • threshold voltage 10%
  • energy 3%
  7 引文 斯高帕斯（Scopus）
• 2010

  The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide- semiconductor field-effect transistors

  Hsieh, E. R. & Chung, S. S., 2010, 於: Applied Physics Letters. 96, 9, 093501.

  研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

  • electron mobility 100%
  • metal oxide semiconductors 99%
  • proximity 92%
  • field effect transistors 76%
  • carbon 64%
  15 引文 斯高帕斯（Scopus）