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查看斯高帕斯 (Scopus) 概要
謝 易叡
助理教授
電機工程學系
電子郵件
erayhsieh
ee.ncu.edu
tw
網站
http://www2.ee.ncu.edu.tw/member.html?type=2
h-index
268
引文
8
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2008
2023
每年研究成果
概覽
指紋
網路
研究計畫
(5)
研究成果
(79)
類似的個人檔案
(6)
如果您對這些純文本內容做了任何改變，很快就會看到。
指紋
查看啟用 E-Ray Hsieh 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
FinFET
100%
Data storage equipment
53%
RRAM
51%
Tunnel field effect transistors
34%
Transistors
29%
Metals
26%
Hardware security
24%
Negative bias temperature instability
24%
Doping (additives)
23%
Static random access storage
23%
Drain current
23%
Carrier transport
22%
Field effect transistors
22%
Oxides
22%
Gate dielectrics
22%
Durability
21%
Demonstrations
21%
Capacitance
20%
Ballistics
17%
Telegraph
16%
Internet of things
16%
Ions
15%
Electric fuses
15%
Leakage currents
14%
Ferroelectric materials
13%
Hot carriers
12%
Strained silicon
12%
Degradation
12%
Temperature
11%
Scattering
10%
Electric potential
10%
MOSFET devices
9%
Hamming distance
9%
Networks (circuits)
9%
Surface roughness
9%
Electric breakdown
8%
Nonvolatile storage
7%
Computer programming
7%
Hafnium
7%
Cryogenics
7%
High-k dielectric
7%
Boron
7%
Nitrides
7%
Substrates
7%
Heating
6%
Logic gates
6%
Foundries
6%
Nitrogen
6%
Electrodes
5%
High electron mobility transistors
5%
Chemical Compounds
Drain Current
36%
Resistance
24%
Foundry
22%
Velocity
22%
Tunneling
19%
Application
18%
Voltage
15%
Charge Pumping
14%
Dielectric Material
13%
Leakage Current
12%
Compound Mobility
12%
Strain
12%
Parasitic
10%
Interface Trap
9%
Dipole
8%
Cryogenics
8%
Thermal Resistance
7%
Weight
7%
Conductance
7%
Field Effect
7%
Dissipation
7%
Schottky Barrier
6%
Time
6%
Length
6%
Quantum Theory
6%
Oxide
5%
Hafnium Atom
5%
Tunneling Current
5%
Ion
5%
Reduction
5%
Physics & Astronomy
field effect transistors
33%
CMOS
29%
metal oxide semiconductors
22%
logic
13%
random numbers
12%
fuses
12%
ballistics
11%
traps
9%
cells
9%
leakage
9%
endurance
8%
generators
8%
silicon
7%
programming
7%
surface roughness
6%
learning
6%
carbon
6%
performance
6%
transistors
5%
fins
5%
SOI (semiconductors)
5%
noise measurement
5%
electron mobility
5%
