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查看啟用 E-Ray Hsieh 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform
Lin, L. C., Hsieh, E. R., Kao, T. C., Lee, M. Y., Chang, J. K., Guo, J. C., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2022, 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審
1 引文 斯高帕斯(Scopus) -
Cryogenic Quasi-Ballistic Transport Enhanced by Strained Silicon Technologies in 14-nm Complementary Fin Field Effect Transistors Through Virtual Source Model
Hsieh, E. R., Wang, Z. Y., Huang, Y. S., Hung, T. C., Lyu, R. Y. & Lee, K. Y., 1 7月 2022, 於: IEEE Transactions on Electron Devices. 69, 7, p. 3575-3580 6 p.研究成果: 雜誌貢獻 › 期刊論文 › 同行評審
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Emulator of Gene Mutation: Interfering True Random Number Generators using Resistive-gate Non-volatile-memories
Hsieh, E. R., Huang, P. H., Miu, M. L., Huang, S. Y., Lu, S. M. & Lyu, R. Y., 2022, (已被接受) 於: IEEE Electron Device Letters. p. 1 1 p.研究成果: 雜誌貢獻 › 期刊論文 › 同行評審
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NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFEto Break Great Memory Wall with 10 ns of PGM-pulse, 1010Cycles of Endurance, and Decade Lifetime at 103 °C
Hsieh, E. R., Chang, J. K., Tang, T. Y., Li, Y. J., Liang, C. W., Lin, M. Y., Huang, S. Y., Su, C. J., Guo, J. C. & Chung, S. S., 2022, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., p. 359-360 2 p. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2022-June).研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審
1 引文 斯高帕斯(Scopus) -
Positive-Bias-Temperature-Instability Induced Random-Trap-Fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs
Hsieh, E. R., Wang, Z. Y., Ye, Y. H., Wu, Y. S., Huang, C. F., Huang, P. S., Huang, Y. S., Miu, M. L., Su, H. S., Huang, S. Y. & Lu, S. M., 1 9月 2022, 於: IEEE Electron Device Letters. 43, 9, p. 1396-1399 4 p.研究成果: 雜誌貢獻 › 期刊論文 › 同行評審