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查看斯高帕斯 (Scopus) 概要
辛 正倫
教授,
電機工程學系
電子郵件
clhsin
ee.ncu.edu
tw
網站
https://cis.ncu.edu.tw/iTeacher/home/0xfeb78cb981372ee29f897184e50a6943
h-index
2175
引文
19
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2005
2025
每年研究成果
概覽
指紋
網路
研究計畫
(11)
研究成果
(60)
類似的個人檔案
(4)
指紋
查看啟用 Cheng-Lun Hsin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Annealing
7%
Bicrystal
12%
BiFeO3 Thin Film
8%
Bismuth Telluride
8%
Cobalt Silicide
8%
Condensation Method
8%
Dislocation
7%
Dislocation Array
8%
Electron Beam
8%
Energy Conversion
7%
Field Emission Properties
12%
Ge Nanowires
8%
Germanide
9%
Germanium
10%
Graphene Layer
8%
Growth Techniques
17%
In Situ Transmission Electron Microscopy
7%
In2Se3
12%
Indium Oxide
23%
Nano-heterostructure
17%
Nanocrystals
8%
Nanoring
12%
Nanorods
12%
Nanostructures
34%
Nanowires
47%
Near-infrared Spectrum
7%
Optical Communications
7%
Optoelectronic Integrated Circuits
8%
Oxides
7%
P-type
16%
Phase Transition
10%
Physical Properties
16%
Plasmon Resonance
9%
Rapid Melting Growth
17%
Resistive Random Access Memory (ReRAM)
10%
Responsivity
8%
Si Photodetectors
8%
Si Substrate
12%
SiGe
23%
Silicide
22%
Silicon Nanowires (SiNWs)
19%
Single-crystalline
25%
Thermal Conductivity
9%
Thermoelectric Applications
7%
Thermoelectric Materials
11%
Thermoelectric Properties
16%
Transmission Electron Microscope
7%
Vapor Condensation
8%
Vapor Transport Method
8%
ZnO Nanowires
15%
Material Science
Anisotropy
8%
Atomic Structure
5%
Bicrystal
11%
Cobalt
8%
Composite Material
10%
Density
17%
Electrical Resistivity
9%
Electron Microscopy
8%
Electronic Circuit
13%
Film
15%
Germanium
8%
Graphene
12%
Heterojunction
19%
Indium
11%
Nanodots
8%
Nanoparticle
6%
Nanoribbon
10%
Nanorod
15%
Nanostructure
41%
Nanowire
100%
Optical Property
7%
Oxide Compound
13%
Phase Change Material
5%
Photoluminescence
6%
Photosensor
17%
Physical Property
15%
Piezoelectricity
5%
Silicide
38%
Silicon
37%
Surface (Surface Science)
12%
Thermal Conductivity
19%
Thermoelectric Materials
10%
Thermoelectrics
30%
Thin Films
23%
Transmission Electron Microscopy
14%
ZnO
29%
Engineering
Bicrystal
8%
Conversion Efficiency
5%
Electrical Measurement
5%
Field Emission
9%
Future Application
5%
Future Design
6%
Heterostructures
13%
Initial Stage
5%
Mean Time to Failure
7%
Melting Point
17%
Metal-Oxide-Semiconductor Field-Effect Transistor
6%
Nanomaterial
25%
Nanorod
7%
Nanoscale
10%
Nanowire
53%
Optoelectronics
5%
Phase Change Material
7%
Photodetector
14%
Photometer
12%
Plasmonics
5%
Ray Diffraction
6%
Responsivity
10%
Si Substrate
8%
Silicon Dioxide
5%
