臺灣經濟發展研究中心

Keyphrases

1. American Options 21%
2. Asian Options 15%
3. Atomic Force Microscopy 17%
4. Behavioral Intention 16%
5. Business Intelligence 23%
6. Carrier Recombination 15%
7. China 19%
8. Chinese Patent 15%
9. Circular Couette Flow 23%
10. Common Optical Path 15%
11. Convexity 32%
12. Crystal Fiber 19%
13. Crystal Growth 49%
14. Crystal-melt Interface 63%
15. Czochralski Growth 28%
16. Czochralski Silicon 43%
17. Directional Solidification 28%
18. Droplet Migration 24%
19. Efficiency Droop 39%
20. Enterprise Resource Planning 20%
21. Enterprise Resource Planning Systems 24%
22. Fake Reviews 15%
23. Floating Zone 51%
24. Flow Field 17%
25. Flow Transport 17%
26. Fluid Flow 18%
27. Game Theoretic Approach 31%
28. Growth Process 40%
29. Growth Rate 19%
30. Heat Flow 20%
31. Heat Transport 24%
32. Heater 24%
33. Heterodyne Interferometer 15%
34. Hotels 28%
35. Indium Gallium Nitride (InGaN) 27%
36. Ingot 30%
37. Input Power 26%
38. Interface Shape 15%
39. Interferometric 15%
40. International Comparison 15%
41. Internet Protocol Version 6 (IPv6) 15%
42. Junction Temperature 15%
43. Laser Heated Pedestal Growth Method 30%
44. Light-emitting Diodes 54%
45. LiNbO3 Crystal 31%
46. Linear Stability 15%
47. Lithium Niobate 58%
48. MgAl2O4 Spinel 21%
49. Motion Stage 15%
50. Multicrystalline Silicon 20%
51. Multicrystalline Silicon Ingot 15%
52. Nanocrystals 15%
53. Near-infrared Spectrum 15%
54. Numerical Computation 37%
55. Numerical Investigation 18%
56. Numerical Simulation 70%
57. Offline Channels 15%
58. Online to Offline 18%
59. Online Travel Agency 18%
60. Options Markets 18%
61. Oxygen Concentration 20%
62. Oxygen Transport 28%
63. Partial Least Squares Structural Equation Modeling (PLS-SEM) 17%
64. Phosphor-converted White Light-emitting Diodes 15%
65. Popular 24%
66. Product Recommendation 19%
67. Rectangular Cavity 15%
68. Remote Phosphor Structure 23%
69. Review Comments 23%
70. Richardson Extrapolation 15%
71. Sapphire 23%
72. Sapphire Crystal 45%
73. Sapphire Surface 39%
74. Silicon Crystal Growth 39%
75. Silicon Feedstock 15%
76. Silicon Melt 26%
77. Single Crystal Fiber 31%
78. Single Quantum Well 22%
79. Small to Medium Size Enterprises 23%
80. Solid-solid Interface 16%
81. Solidification Process 22%
82. Stage Design 15%
83. Taiwan 100%
84. Temperature Distribution 20%
85. Temperature Effect 37%
86. Temperature Field 20%
87. Thermal Effect 30%
88. Thermal Field 15%
89. Thermal Stress 23%
90. Thermocapillary 20%
91. Thermocapillary Convection 55%
92. Thermoelectric Properties 17%
93. Total Factor Productivity Change 15%
94. Transaction Database 17%
95. Two Dimensional 18%
96. Underlying Asset 15%
97. Velocity Field 15%
98. Vortex 22%
99. Weather Derivatives 15%
100. World Wide Web 18%

Engineering

1. Absorption Coefficient 11%
2. Absorption Edge 13%
3. Absorptivity 11%
4. Actuation 9%
5. Alternating Current 15%
6. Atomic Force Microscopy 15%
7. Blue Light 7%
8. Carbon Concentration 8%
9. Carrier Leakage 15%
10. Central Region 13%
11. Computer Simulation 60%
12. Coordinate System 10%
13. Couette Flow 23%
14. Crystal Surface 19%
15. Density Distribution 11%
16. Design Stage 15%
17. Dislocation Density 10%
18. Dynamic Contact Angle 8%
19. Efficiency Droop 39%
20. Electrical Power 15%
21. Energy Engineering 10%
22. Energy Equation 9%
23. Exchanger 8%
24. Experimental Observation 13%
25. Experimental Result 48%
26. Extrapolation Method 7%
27. Finite Difference Method 10%
28. Finite Element Analysis 12%
29. Floating Zone 21%
30. Flow Distribution 11%
31. Flow Structure 7%
32. Fluid Flow 18%
33. Free Surface 20%
34. Game Theory Model 11%
35. Gaussians 10%
36. Good Agreement 9%
37. Growth Method 29%
38. Growth Process 53%
39. Heat Losses 12%
40. Heat Resistance 13%
41. Heterogeneous Nucleation 7%
42. Input Power 29%
43. Interface Shape 15%
44. Iso 15%
45. Isothermal 27%
46. Junction Temperature 15%
47. Lattice Constant 17%
48. Light-Emitting Diode 81%
49. Linearized Stability 15%
50. Liquid Droplet 10%
51. Melting Point 9%
52. Melting Process 11%
53. Melting Temperature 13%
54. Microchannel 23%
55. Mixed Strategy 15%
56. Mols 15%
57. Multicrystalline Silicon 22%
58. Nash Equilibrium 15%
59. Navier-Stokes Equation 13%
60. Numerical Computation 40%
61. Numerical Study 39%
62. Optical Path 15%
63. Oxygen Concentration 10%
64. Oxygen Content 14%
65. Phase Composition 19%
66. Phosphor Layer 9%
67. Physical Problem 7%
68. Polycrystalline 10%
69. Power Ratio 10%
70. Power Utility 7%
71. Quality Information 10%
72. Quality System 10%
73. Quantum Well 23%
74. Rectangular Cavity 15%
75. Rod 45%
76. Rotational 9%
77. Sapphire Surface 23%
78. Semisolid 7%
79. Side Wall 11%
80. Silicon Dioxide 9%
81. Silicon Oxide 7%
82. Simulation Result 34%
83. Solidification 19%
84. Solidification Process 20%
85. Success Factor 15%
86. Surface Contamination 7%
87. Surface Deformation 13%
88. Temperature Behavior 7%
89. Temperature Dependence 9%
90. Temperature Distribution 33%
91. Terrorist Action 11%
92. Thermal Effect 32%
93. Thermal Field 8%
94. Thermal Gradient 11%
95. Thermal Stress 23%
96. Thixotropic Behavior 7%
97. Two Degree of Freedom 7%
98. Two Dimensional 24%
99. Velocity Field 11%
100. Vortex 22%