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臺灣經濟發展研究中心
國立中央大學
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886-3-4227151 ext.34700
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[email protected]
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http://rcted.ncu.edu.tw/index.asp
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人才檔案
(5)
研究計畫
(2)
研究成果
(216)
影響
(1)
指紋
查看啟用 臺灣經濟發展研究中心 的研究主題。這些主題標籤來自此機構會員的作品。共同形成了獨特的指紋。
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Keyphrases
Taiwan
100%
Numerical Simulation
67%
Crystal-melt Interface
60%
Lithium Niobate
56%
Thermocapillary Convection
53%
Light-emitting Diodes
52%
Floating Zone
48%
Crystal Growth
45%
Sapphire Crystal
43%
Czochralski Silicon
41%
Efficiency Droop
37%
Sapphire Surface
37%
Silicon Crystal Growth
37%
Growth Process
37%
Numerical Computation
35%
Temperature Effect
31%
Convexity
31%
Single Crystal Fiber
30%
Game Theoretic Approach
30%
Ingot
28%
Thermal Effect
28%
Czochralski Growth
27%
Oxygen Transport
26%
Hotels
26%
Directional Solidification
26%
Indium Gallium Nitride (InGaN)
26%
LiNbO3 Crystal
25%
China
25%
Laser Heated Pedestal Growth Method
25%
Input Power
25%
Silicon Melt
25%
Enterprise Resource Planning Systems
23%
Droplet Migration
23%
Heat Transport
23%
Heater
23%
Popular
23%
Remote Phosphor Structure
22%
Circular Couette Flow
22%
Small to Medium Size Enterprises
22%
Business Intelligence
22%
Review Comments
22%
Sapphire
22%
Thermal Stress
21%
Single Quantum Well
21%
Vortex
21%
Solidification Process
21%
MgAl2O4 Spinel
20%
American Options
20%
Enterprise Resource Planning
19%
Oxygen Concentration
19%
Heat Flow
19%
Temperature Field
19%
Multicrystalline Silicon
19%
Thermocapillary
19%
Product Recommendation
18%
Crystal Fiber
18%
United States
18%
Growth Rate
18%
Online to Offline
17%
Numerical Investigation
17%
Options Markets
17%
Fluid Flow
17%
Online Travel Agency
17%
World Wide Web
17%
Two Dimensional
17%
Flow Transport
16%
Thermoelectric Properties
16%
Flow Field
16%
Transaction Database
16%
Atomic Force Microscopy
16%
Partial Least Squares Structural Equation Modeling (PLS-SEM)
16%
Solid-solid Interface
15%
Behavioral Intention
15%
Temperature Distribution
15%
Carrier Recombination
15%
Thermal Field
15%
Offline Channels
15%
Silicon Feedstock
15%
Stage Design
15%
Motion Stage
15%
Fake Reviews
15%
Nanocrystals
15%
Interferometric
15%
Phosphor-converted White Light-emitting Diodes
15%
Multicrystalline Silicon Ingot
15%
Velocity Field
15%
Richardson Extrapolation
15%
Near-infrared Spectrum
15%
Weather Derivatives
15%
International Comparison
15%
Interface Shape
15%
Internet Protocol Version 6 (IPv6)
15%
Common Optical Path
15%
Underlying Asset
15%
Junction Temperature
15%
Asian Options
15%
Heterodyne Interferometer
15%
Rectangular Cavity
15%
Linear Stability
15%
Chinese Patent
15%
Engineering
Light-Emitting Diode
77%
Experimental Result
50%
Growth Process
45%
Rod
42%
Efficiency Droop
37%
Numerical Study
37%
Numerical Computation
37%
Simulation Result
33%
Thermal Effect
28%
Temperature Distribution
27%
Input Power
26%
Isothermal
26%
Two Dimensional
23%
Growth Method
23%
Thermal Stress
22%
Sapphire Surface
22%
Microchannel
22%
Couette Flow
22%
Quantum Well
22%
Vortex
21%
Multicrystalline Silicon
21%
Floating Zone
20%
Free Surface
19%
Solidification Process
19%
Lattice Constant
18%
Mixed Strategy
18%
Nash Equilibrium
18%
Directional Solidification
18%
Crystal Surface
18%
Fluid Flow
17%
Carrier Leakage
15%
Electrical Power
15%
Rectangular Cavity
15%
Optical Path
15%
Design Stage
15%
Atomic Force Microscopy
15%
Interface Shape
15%
Junction Temperature
15%
Linearized Stability
15%
Success Factor
15%
Iso
15%
Mols
15%
Alternating Current
15%
Absorption Edge
15%
Terrorist Action
15%
Oxygen Content
14%
Heat Sources
13%
Actuator
13%
Central Region
12%
Heat Resistance
12%
Navier-Stokes Equation
12%
Experimental Observation
12%
Surface Deformation
12%
Thermal Gradient
12%
Temperature Gradients
12%
Heat Losses
11%
Finite Element Analysis
11%
Game Theory Model
11%
Velocity Field
11%
Melting Process
11%
Density Distribution
11%
Absorptivity
11%
Absorption Coefficient
11%
Vapor Deposition
11%
Chemical Vapor Deposition
11%
Flow Distribution
10%
Side Wall
10%
Coordinate System
10%
Finite Difference Method
10%
Polycrystalline
10%
Quality System
10%
Gaussians
10%
Dislocation Density
10%
Quality Information
10%
Liquid Droplet
10%
Oxygen Concentration
9%
Melting Point
9%
Silicon Dioxide
9%
Good Agreement
9%
Energy Equation
9%
Rotational
8%
Phosphor Layer
8%
Temperature Dependence
8%
Actuation
8%
Power Ratio
8%
Exchanger
7%
Carbon Concentration
7%
Melting Temperature
7%
Dynamic Contact Angle
7%
Semisolid
7%
Thixotropic Behavior
7%
Physical Problem
7%
Silicon Oxide
7%
Power Utility
7%
Heterogeneous Nucleation
7%
Extrapolation Method
7%
Flow Structure
7%
Blue Light
7%
Surface Contamination
7%
Temperature Behavior
7%