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臺灣經濟發展研究中心
國立中央大學
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886-3-4227151 ext.34700
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[email protected]
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http://rcted.ncu.edu.tw/index.asp
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人才檔案
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研究計畫
(2)
研究成果
(234)
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(1)
指紋
查看啟用 臺灣經濟發展研究中心 的研究主題。這些主題標籤來自此機構會員的作品。共同形成了獨特的指紋。
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Keyphrases
Taiwan
100%
Numerical Simulation
62%
Crystal-melt Interface
54%
Lithium Niobate
50%
Thermocapillary Convection
47%
Light-emitting Diodes
47%
Floating Zone
43%
Crystal Growth
40%
Sapphire Crystal
39%
Czochralski Silicon
37%
Efficiency Droop
33%
Sapphire Surface
33%
Silicon Crystal Growth
33%
Growth Process
33%
Numerical Computation
32%
Temperature Effect
28%
Convexity
28%
Single Crystal Fiber
27%
Game Theoretic Approach
27%
Sapphire
26%
Ingot
25%
Thermal Effect
25%
Enterprise Resource Planning
24%
Czochralski Growth
24%
Input Power
24%
Oxygen Transport
24%
Hotels
24%
Directional Solidification
24%
Indium Gallium Nitride (InGaN)
23%
Enterprise Resource Planning Systems
23%
LiNbO3 Crystal
23%
China
23%
Laser Heated Pedestal Growth Method
22%
Silicon Melt
22%
Popular
21%
Droplet Migration
21%
Heat Transport
20%
Heater
20%
Remote Phosphor Structure
20%
Circular Couette Flow
20%
Small to Medium Size Enterprises
20%
Business Intelligence
20%
Review Comments
20%
Thermal Stress
19%
Single Quantum Well
19%
Vortex
19%
Solidification Process
19%
MgAl2O4 Spinel
18%
World Wide Web
18%
American Options
18%
Oxygen Concentration
17%
Heat Flow
17%
Temperature Field
17%
Multicrystalline Silicon
17%
Thermocapillary
17%
Product Recommendation
17%
Crystal Fiber
16%
United States
16%
Internet Protocol Version 6 (IPv6)
16%
Growth Rate
16%
Online to Offline
15%
Numerical Investigation
15%
Options Markets
15%
Fluid Flow
15%
Online Travel Agency
15%
Two Dimensional
15%
Flow Transport
15%
Thermoelectric Properties
15%
Flow Field
15%
Transaction Database
14%
Atomic Force Microscopy
14%
Partial Least Squares Structural Equation Modeling (PLS-SEM)
14%
Solid-solid Interface
14%
Behavioral Intention
13%
Temperature Distribution
13%
Carrier Recombination
13%
Thermal Field
13%
Offline Channels
13%
Silicon Feedstock
13%
Stage Design
13%
Motion Stage
13%
Fake Reviews
13%
Nanocrystals
13%
Interferometric
13%
Phosphor-converted White Light-emitting Diodes
13%
Multicrystalline Silicon Ingot
13%
Velocity Field
13%
Richardson Extrapolation
13%
Near-infrared Spectrum
13%
Weather Derivatives
13%
International Comparison
13%
Interface Shape
13%
Common Optical Path
13%
Underlying Asset
13%
Junction Temperature
13%
Asian Options
13%
Heterodyne Interferometer
13%
Rectangular Cavity
13%
Linear Stability
13%
Chinese Patent
13%
Engineering
Light-Emitting Diode
69%
Experimental Result
45%
Growth Process
41%
Rod
37%
Efficiency Droop
33%
Numerical Study
33%
Numerical Computation
33%
Isothermal
30%
Simulation Result
29%
Input Power
26%
Thermal Effect
25%
Temperature Distribution
25%
Vortex
22%
Two Dimensional
21%
Growth Method
21%
Thermal Stress
20%
Sapphire Surface
20%
Microchannel
20%
Couette Flow
20%
Quantum Well
19%
Multicrystalline Silicon
19%
Heat Resistance
18%
Free Surface
18%
Floating Zone
18%
Heat Losses
17%
Solidification Process
17%
Lattice Constant
16%
Mixed Strategy
16%
Nash Equilibrium
16%
Iso
16%
Directional Solidification
16%
Crystal Surface
16%
Fluid Flow
15%
Carrier Leakage
13%
Electrical Power
13%
Rectangular Cavity
13%
Optical Path
13%
Design Stage
13%
Atomic Force Microscopy
13%
Interface Shape
13%
Junction Temperature
13%
Linearized Stability
13%
Success Factor
13%
Mols
13%
Alternating Current
13%
Absorption Edge
13%
Terrorist Action
13%
Semisolid
13%
Oxygen Content
12%
Heat Sources
12%
Actuator
12%
Shear Rate
11%
Central Region
11%
Navier-Stokes Equation
11%
Experimental Observation
11%
Surface Deformation
11%
Thermal Gradient
10%
Temperature Gradients
10%
Carbon Concentration
10%
Finite Element Analysis
10%
Game Theory Model
10%
Velocity Field
10%
Melting Process
10%
Density Distribution
10%
Absorptivity
10%
Absorption Coefficient
10%
Vapor Deposition
10%
Chemical Vapor Deposition
10%
Oxygen Concentration
10%
Flow Distribution
9%
Side Wall
9%
Silicon Dioxide
9%
Coordinate System
9%
Finite Difference Method
9%
Polycrystalline
9%
Quality System
9%
Gaussians
9%
Dislocation Density
9%
Quality Information
9%
Liquid Droplet
9%
Melting Point
8%
Good Agreement
8%
Magnetic Field
8%
Energy Equation
8%
Rotational
7%
Phosphor Layer
7%
Temperature Dependence
7%
Actuation
7%
Power Ratio
7%
Growth Interface
7%
Thermal Simulation
7%
Exchanger
7%
Melting Temperature
6%
Dynamic Contact Angle
6%
Thixotropic Behavior
6%
Physical Problem
6%
Silicon Oxide
6%
Power Utility
6%
Heterogeneous Nucleation
6%
Extrapolation Method
6%