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前瞻科技研究中心
國立中央大學
電話
886-3-4227151 ext.
電子郵件
[email protected]
網站
https://www.recast.ncu.edu.tw/#/
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人才檔案
(5)
研究成果
(757)
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(4)
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(1)
指紋
查看啟用 前瞻科技研究中心 的研究主題。這些主題標籤來自此機構會員的作品。共同形成了獨特的指紋。
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Keyphrases
Taiwan
100%
Gallium Arsenide
98%
Indium Gallium Nitride (InGaN)
91%
Molecular Beam Epitaxy
60%
GaN HEMT
59%
InGaAs
54%
AlGaN-GaN
50%
Quantum Dots
50%
VHF Radar
49%
Multiple Quantum Wells
43%
Low Temperature
35%
Epilayer
32%
InAs Quantum Dots
32%
Optical Properties
31%
High Electron Mobility Transistor
30%
Light-emitting Diodes
30%
Metal-organic Chemical Vapor Deposition (MOCVD)
29%
Building Model
28%
GaAs Substrate
27%
AlGaAs
27%
Surface Deformation
27%
InGaN Quantum Wells
26%
Photoluminescence
26%
InAlAs
25%
InGaSb
25%
Temperature Effect
24%
Heterojunction Bipolar Transistors
24%
GaAsSb
23%
GaN Heterostructure
23%
Room Temperature
23%
Capping Layer
23%
Landslide
22%
Quantum Dot Lasers
22%
Quantum Well Structure
22%
Double Heterojunction Bipolar Transistor
21%
GaAs Quantum Dot
21%
Electrical Properties
21%
P-GaN
21%
Rectifier
20%
Backscatter
20%
Southern Taiwan
20%
Field-aligned Irregularities
19%
Multiple Quantum Well Structure
19%
Aluminum Gallium Nitride (AlGaN)
19%
Metal-semiconductor-metal Photodetector
18%
Heterostructure Field-effect Transistors
18%
Quantum Well
18%
Si Substrate
18%
Hyperspectral
18%
Spectral Width
18%
AlxGa1-xN
18%
Optical Transmitters
18%
Interferometric Synthetic Aperture Radar (InSAR)
18%
Device Performance
17%
Schottky Rectifier
17%
AlSb
17%
Interferometry
17%
Sporadic E
16%
Earthquake
16%
Self-assembled Quantum Dots
16%
E-region
16%
Sapphire
16%
Ohmic Contact
16%
GaAs-AlGaAs
16%
Reverse Breakdown Voltage
16%
Plasma Irregularities
16%
Land Subsidence
16%
Doppler Velocity
15%
InGaAs Quantum Dots
15%
Gate Length
15%
Transistor
15%
Recombination
15%
Three-dimensional (3D)
15%
Cm(III)
15%
GaN-based
15%
Differential Interferometric Synthetic Aperture Radar (DInSAR)
14%
Ni-P
14%
Indium Content
14%
SAR Interferometry
14%
Photonic Crystal Nanocavity
14%
Annealing
14%
Heterostructure
13%
Undoped
13%
Transconductance
13%
Radar Echo
13%
Fmax
13%
MSM Photodetector
13%
Central Taiwan
13%
AlInGaN
13%
P-type
13%
Field-effect Transistors
13%
Turn-on Voltage
12%
Stimulated Emission
12%
Landslide Susceptibility
12%
Buffer Layer
12%
Photorealistic
12%
Frequency Domain Interferometry
12%
Location Estimation
12%
Ultraviolet Light-emitting Diode (UV-LED)
12%
Subsidence
12%
Engineering
Gallium Arsenide
91%
Heterojunctions
78%
Quantum Dot
74%
Quantum Well
70%
Indium Gallium Arsenide
63%
Model Building
43%
Bipolar Transistor
37%
Field-Effect Transistor
37%
Light-Emitting Diode
36%
Low-Temperature
33%
Aluminium Gallium Arsenide
31%
Interferometry
30%
Breakdown Voltage
29%
Experimental Result
26%
Photometer
25%
Photonics
23%
Current Gain
22%
Cap Layer
21%
Heterostructures
19%
Piezoelectric
19%
Point Cloud
18%
Buffer Layer
18%
Ohmic Contacts
18%
Device Performance
17%
Gaas Substrate
17%
Gate Length
17%
Cutoff Frequency
16%
Phase Composition
16%
Photodetector
15%
Terahertz
15%
Reflectance
15%
Energy Engineering
15%
Nitride
15%
Current Drain
15%
Frequency Domain
15%
Band Gap
14%
Room Temperature
14%
Filtration
14%
Photodiode
14%
Si Substrate
13%
Carrier Concentration
13%
Metal Organic Chemical Vapor Deposition
13%
Superlattice
13%
Location Estimation
12%
Electric Field
12%
Passivation
12%
Antenna
12%
Figure of Merit
12%
Doppler Velocity
11%
Radar Echo
11%
Thin Films
11%
Two Dimensional
11%
Epitaxial Film
11%
Feature Point
11%
Output Power
11%
Responsivity
10%
Sheet Resistance
10%
Radar Beam
10%
Inertial Measurement
10%
Units of Measurement
10%
Terminal Velocity
10%
Tracking (Position)
10%
Hyperspectral Image
10%
Indium Content
10%
Schottky Barrier
9%
Dislocation Density
9%
Global Positioning System
9%
Carrier Lifetime
9%
Temperature Dependence
9%
Vapor Deposition
9%
Chemical Vapor Deposition
9%
Layer Structure
9%
Metal-Oxide-Semiconductor Field-Effect Transistor
9%
Spectral Width
9%
Localized State
9%
High Resolution
9%
Optical Pulse
8%
Layer Thickness
8%
Drift Velocity
8%
Hyperspectral Data
8%
Dielectrics
8%
Grey Level
8%
Transients
8%
Close Range
7%
Spectral Feature
7%
Current-Voltage Characteristic
7%
Single Image
7%
Barrier Layer
7%
Drop Size Distribution
7%
Resonant Cavity
7%
Silicon Substrate
7%
Fermi Level
7%
Conduction Band
7%
Temperature Range
7%
Echo Power
7%
Activation Energy
6%
Power Device
6%
Temperature Coefficient
6%
Stimulated Emission
6%
Capping Layer
6%